Synaptic Transistor Based on In‐Ga‐Zn‐O Channel and Trap Layers with Highly Linear Conductance Modulation for Neuromorphic Computing

Synaptic Transistor Based on In‐Ga‐Zn‐O Channel and Trap Layers with Highly Linear Conductance Modulation for Neuromorphic Computing

Abstract Brain‐inspired neuromorphic computing has drawn significant attraction as a promising technology beyond von Neumann architecture by using the parallel structure of synapses and neurons. Various artificial synapse configurations and materials have been proposed to emulate synaptic behaviors...

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Bibliographic Details
Main Authors: Junhyeong Park, Yuseong Jang, Jinkyu Lee, Soobin An, Jinsung Mok, Soo‐Yeon Lee
Format: Article
Language:English
Published: Wiley-VCH 2023-06-01
Series:Advanced Electronic Materials
Subjects:
degenerate
indium‐gallium‐zinc‐oxide
neuromorphic computing
synapse plasticity
synaptic transistors
Online Access:https://doi.org/10.1002/aelm.202201306

Internet

https://doi.org/10.1002/aelm.202201306

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