Long-Term Behavior of Hydrogenated Amorphous Silicon Thin-Film Transistors Covered With Color Filters for Use in Optical Sensors
This work investigates the long-term behavior of photo thin-film transistors (TFTs) that are covered with color filters and based on hydrogenated amorphous silicon (a-Si:H) technology. Based on the electrical characteristics and the optical responses of these TFTs as measured under different stress...
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| Format: | Article |
| Language: | English |
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IEEE
2019-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8807109/ |
| _version_ | 1818728080116547584 |
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| author | Fu-Hsing Chen Chia-Lun Lee Jui-Hung Chang Wei-Sheng Liao Chieh-An Lin Chia-Wei Kuo Chih-Lung Lin |
| author_facet | Fu-Hsing Chen Chia-Lun Lee Jui-Hung Chang Wei-Sheng Liao Chieh-An Lin Chia-Wei Kuo Chih-Lung Lin |
| author_sort | Fu-Hsing Chen |
| collection | DOAJ |
| description | This work investigates the long-term behavior of photo thin-film transistors (TFTs) that are covered with color filters and based on hydrogenated amorphous silicon (a-Si:H) technology. Based on the electrical characteristics and the optical responses of these TFTs as measured under different stress conditions, a new method for driving a photo TFT with a negative gate-source voltage is proposed to suppress the degradation of the photocurrent. The effectiveness of the newly proposed method is verified using our previously developed white-light photocurrent gating (WPCG) structure, the measurement of photocurrents, and the established models of red, green, and blue photo TFTs. An accelerated lifetime test of the fabricated circuit was carried out at 70 °C and under the illumination of ambient light for 504 hours, demonstrating that the proposed method improves the long-term reliability of optical sensors. |
| first_indexed | 2024-12-17T22:24:18Z |
| format | Article |
| id | doaj.art-420ec449a646436d87c7c91930658d28 |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-12-17T22:24:18Z |
| publishDate | 2019-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-420ec449a646436d87c7c91930658d282022-12-21T21:30:24ZengIEEEIEEE Access2169-35362019-01-01711617211617810.1109/ACCESS.2019.29364058807109Long-Term Behavior of Hydrogenated Amorphous Silicon Thin-Film Transistors Covered With Color Filters for Use in Optical SensorsFu-Hsing Chen0Chia-Lun Lee1Jui-Hung Chang2Wei-Sheng Liao3Chieh-An Lin4Chia-Wei Kuo5Chih-Lung Lin6https://orcid.org/0000-0002-4948-8591Department of Electrical Engineering, National Cheng Kung University, Tainan, TaiwanDepartment of Electrical Engineering, National Cheng Kung University, Tainan, TaiwanDepartment of Electrical Engineering, National Cheng Kung University, Tainan, TaiwanDepartment of Electrical Engineering, National Cheng Kung University, Tainan, TaiwanDepartment of Electrical Engineering, National Cheng Kung University, Tainan, TaiwanAU Optronics Corporation, Hsinchu, TaiwanDepartment of Electrical Engineering, National Cheng Kung University, Tainan, TaiwanThis work investigates the long-term behavior of photo thin-film transistors (TFTs) that are covered with color filters and based on hydrogenated amorphous silicon (a-Si:H) technology. Based on the electrical characteristics and the optical responses of these TFTs as measured under different stress conditions, a new method for driving a photo TFT with a negative gate-source voltage is proposed to suppress the degradation of the photocurrent. The effectiveness of the newly proposed method is verified using our previously developed white-light photocurrent gating (WPCG) structure, the measurement of photocurrents, and the established models of red, green, and blue photo TFTs. An accelerated lifetime test of the fabricated circuit was carried out at 70 °C and under the illumination of ambient light for 504 hours, demonstrating that the proposed method improves the long-term reliability of optical sensors.https://ieeexplore.ieee.org/document/8807109/Hydrogenated amorphous silicon thin-film transistorlong-term reliabilityoptical sensor |
| spellingShingle | Fu-Hsing Chen Chia-Lun Lee Jui-Hung Chang Wei-Sheng Liao Chieh-An Lin Chia-Wei Kuo Chih-Lung Lin Long-Term Behavior of Hydrogenated Amorphous Silicon Thin-Film Transistors Covered With Color Filters for Use in Optical Sensors IEEE Access Hydrogenated amorphous silicon thin-film transistor long-term reliability optical sensor |
| title | Long-Term Behavior of Hydrogenated Amorphous Silicon Thin-Film Transistors Covered With Color Filters for Use in Optical Sensors |
| title_full | Long-Term Behavior of Hydrogenated Amorphous Silicon Thin-Film Transistors Covered With Color Filters for Use in Optical Sensors |
| title_fullStr | Long-Term Behavior of Hydrogenated Amorphous Silicon Thin-Film Transistors Covered With Color Filters for Use in Optical Sensors |
| title_full_unstemmed | Long-Term Behavior of Hydrogenated Amorphous Silicon Thin-Film Transistors Covered With Color Filters for Use in Optical Sensors |
| title_short | Long-Term Behavior of Hydrogenated Amorphous Silicon Thin-Film Transistors Covered With Color Filters for Use in Optical Sensors |
| title_sort | long term behavior of hydrogenated amorphous silicon thin film transistors covered with color filters for use in optical sensors |
| topic | Hydrogenated amorphous silicon thin-film transistor long-term reliability optical sensor |
| url | https://ieeexplore.ieee.org/document/8807109/ |
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