Investigation of Current Collapse Mechanism on AlGaN/GaN Power Diodes
In this paper, a methodology is proposed for studying the current collapse effects of Gallium Nitride (GaN) power diodes and the consequences on the dynamic on-resistance (RON). Indeed, the growing interest of GaN based, high frequency power conversion requires an accurate characterization and a dee...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-04-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/12/9/2007 |
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| author | Martin Doublet Nicolas Defrance Etienne Okada Loris Pace Thierry Duquesne Bouyssou Emilien Arnaud Yvon Nadir Idir Jean-Claude De Jaeger |
| author_facet | Martin Doublet Nicolas Defrance Etienne Okada Loris Pace Thierry Duquesne Bouyssou Emilien Arnaud Yvon Nadir Idir Jean-Claude De Jaeger |
| author_sort | Martin Doublet |
| collection | DOAJ |
| description | In this paper, a methodology is proposed for studying the current collapse effects of Gallium Nitride (GaN) power diodes and the consequences on the dynamic on-resistance (RON). Indeed, the growing interest of GaN based, high frequency power conversion requires an accurate characterization and a deep understanding of the device’s behaviour before any development of power converters. This study can ultimately be used to model observed trap effects and, thus, improve the equivalent electrical model. Using an in-house circuit and a specific experimental setup, a current-collapse phenomenon inherent to gallium nitride semiconductor is studied on planar 650 V—6 A GaN diodes by applying high voltage stresses over a wide range of temperatures. With this method, useful data on activation energy and capture cross section of electrical defects linked to dynamic RON are extracted. Finally, the origins of such defects are discussed and attributed to carbon-related defects. |
| first_indexed | 2024-03-11T04:20:59Z |
| format | Article |
| id | doaj.art-4233e8fb72d045c6969291f0d305fcd8 |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-03-11T04:20:59Z |
| publishDate | 2023-04-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-4233e8fb72d045c6969291f0d305fcd82023-11-17T22:47:26ZengMDPI AGElectronics2079-92922023-04-01129200710.3390/electronics12092007Investigation of Current Collapse Mechanism on AlGaN/GaN Power DiodesMartin Doublet0Nicolas Defrance1Etienne Okada2Loris Pace3Thierry Duquesne4Bouyssou Emilien5Arnaud Yvon6Nadir Idir7Jean-Claude De Jaeger8Univ. Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, UMR 8520-IEMN, F-59000 Lille, FranceUniv. Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, UMR 8520-IEMN, F-59000 Lille, FranceUniv. Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, UMR 8520-IEMN, F-59000 Lille, FranceUniv. Lyon, Ecole Centrale de Lyon, INSA Lyon, Université Claude Bernard Lyon 1, CNRS, Ampère, UMR5005, F-69130 Ecully, FranceUniv. Lille, Arts et Métiers, Institute of Technology, Centrale Lille, Junia, ULR 2697-L2EP, F-59000 Lille, FranceSTMicroelectronics, F-37000 Tours, FranceSTMicroelectronics, F-37000 Tours, FranceUniv. Lille, Arts et Métiers, Institute of Technology, Centrale Lille, Junia, ULR 2697-L2EP, F-59000 Lille, FranceUniv. Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, UMR 8520-IEMN, F-59000 Lille, FranceIn this paper, a methodology is proposed for studying the current collapse effects of Gallium Nitride (GaN) power diodes and the consequences on the dynamic on-resistance (RON). Indeed, the growing interest of GaN based, high frequency power conversion requires an accurate characterization and a deep understanding of the device’s behaviour before any development of power converters. This study can ultimately be used to model observed trap effects and, thus, improve the equivalent electrical model. Using an in-house circuit and a specific experimental setup, a current-collapse phenomenon inherent to gallium nitride semiconductor is studied on planar 650 V—6 A GaN diodes by applying high voltage stresses over a wide range of temperatures. With this method, useful data on activation energy and capture cross section of electrical defects linked to dynamic RON are extracted. Finally, the origins of such defects are discussed and attributed to carbon-related defects.https://www.mdpi.com/2079-9292/12/9/2007gallium nitride (GaN)diodedynamic on-resistance (R<sub>ON</sub>)current collapsepower electronicsArrhenius |
| spellingShingle | Martin Doublet Nicolas Defrance Etienne Okada Loris Pace Thierry Duquesne Bouyssou Emilien Arnaud Yvon Nadir Idir Jean-Claude De Jaeger Investigation of Current Collapse Mechanism on AlGaN/GaN Power Diodes Electronics gallium nitride (GaN) diode dynamic on-resistance (R<sub>ON</sub>) current collapse power electronics Arrhenius |
| title | Investigation of Current Collapse Mechanism on AlGaN/GaN Power Diodes |
| title_full | Investigation of Current Collapse Mechanism on AlGaN/GaN Power Diodes |
| title_fullStr | Investigation of Current Collapse Mechanism on AlGaN/GaN Power Diodes |
| title_full_unstemmed | Investigation of Current Collapse Mechanism on AlGaN/GaN Power Diodes |
| title_short | Investigation of Current Collapse Mechanism on AlGaN/GaN Power Diodes |
| title_sort | investigation of current collapse mechanism on algan gan power diodes |
| topic | gallium nitride (GaN) diode dynamic on-resistance (R<sub>ON</sub>) current collapse power electronics Arrhenius |
| url | https://www.mdpi.com/2079-9292/12/9/2007 |
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