Investigation of Current Collapse Mechanism on AlGaN/GaN Power Diodes

Investigation of Current Collapse Mechanism on AlGaN/GaN Power Diodes

In this paper, a methodology is proposed for studying the current collapse effects of Gallium Nitride (GaN) power diodes and the consequences on the dynamic on-resistance (RON). Indeed, the growing interest of GaN based, high frequency power conversion requires an accurate characterization and a dee...

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Bibliographic Details
Main Authors: Martin Doublet, Nicolas Defrance, Etienne Okada, Loris Pace, Thierry Duquesne, Bouyssou Emilien, Arnaud Yvon, Nadir Idir, Jean-Claude De Jaeger
Format: Article
Language:English
Published: MDPI AG 2023-04-01
Series:Electronics
Subjects:
gallium nitride (GaN)
diode
dynamic on-resistance (R<sub>ON</sub>)
current collapse
power electronics
Arrhenius
Online Access:https://www.mdpi.com/2079-9292/12/9/2007

Internet

https://www.mdpi.com/2079-9292/12/9/2007

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