Driver optimization of high power converter based on BIGT reverse conduction loss
Abstract Bi‐mode Insulated Gate Transistor (BIGT), owing to its notable attributes in power density and compact dimensions, holds promising applications in the realm of high power converters. However, its characteristic of the voltage drop in diode mode controlled by gate‐emitter voltage poses signi...
| Main Authors: | , , , , , , , , |
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| 格式: | 文件 |
| 语言: | English |
| 出版: |
Wiley
2024-02-01
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| 丛编: | IET Power Electronics |
| 主题: | |
| 在线阅读: | https://doi.org/10.1049/pel2.12650 |
| _version_ | 1827341792231555072 |
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| author | Lei Qi Ze Li Xiangyu Zhang Jin Yang Yuanfang Lu Jingfei Wang Fuyue Wen Kefeng Wang Xinyu Hu |
| author_facet | Lei Qi Ze Li Xiangyu Zhang Jin Yang Yuanfang Lu Jingfei Wang Fuyue Wen Kefeng Wang Xinyu Hu |
| author_sort | Lei Qi |
| collection | DOAJ |
| description | Abstract Bi‐mode Insulated Gate Transistor (BIGT), owing to its notable attributes in power density and compact dimensions, holds promising applications in the realm of high power converters. However, its characteristic of the voltage drop in diode mode controlled by gate‐emitter voltage poses significant challenges for low‐loss operation. This paper investigates the relationship between BIGT's on‐state voltage drop in diode mode and its gate‐emitter voltage in detail. By combining simulation and experimental analysis, recommended the gate‐emitter voltage values are provided. Furthermore, a novel driver optimization scheme is proposed to automatically lower the gate voltage during reverse conduction, which can effectively reduce the reverse on‐state losses of the BIGT. Experimental validation demonstrates a 10.6% reduction in reverse on‐state voltage drop, showcasing the efficacy of the proposed driver optimization scheme. |
| first_indexed | 2024-03-07T21:55:06Z |
| format | Article |
| id | doaj.art-423dd405a31a4e6b8f0a8f8bcd4ff978 |
| institution | Directory Open Access Journal |
| issn | 1755-4535 1755-4543 |
| language | English |
| last_indexed | 2024-03-07T21:55:06Z |
| publishDate | 2024-02-01 |
| publisher | Wiley |
| record_format | Article |
| series | IET Power Electronics |
| spelling | doaj.art-423dd405a31a4e6b8f0a8f8bcd4ff9782024-02-24T17:06:59ZengWileyIET Power Electronics1755-45351755-45432024-02-0117339440110.1049/pel2.12650Driver optimization of high power converter based on BIGT reverse conduction lossLei Qi0Ze Li1Xiangyu Zhang2Jin Yang3Yuanfang Lu4Jingfei Wang5Fuyue Wen6Kefeng Wang7Xinyu Hu8School of Electrical and Electronic Engineering North China Electric Power University Beijing ChinaSchool of Electrical and Electronic Engineering North China Electric Power University Beijing ChinaSchool of Electrical and Electronic Engineering North China Electric Power University Beijing ChinaSchool of Electrical and Electronic Engineering North China Electric Power University Beijing ChinaSchool of Electrical and Electronic Engineering North China Electric Power University Beijing ChinaSchool of Electrical and Electronic Engineering North China Electric Power University Beijing ChinaC‐EPRI Electric Power Engineering Co., Ltd Beijing ChinaC‐EPRI Electric Power Engineering Co., Ltd Beijing ChinaNantong Power Supply Company, State Grid Jiangsu Electric Power Company Nantong ChinaAbstract Bi‐mode Insulated Gate Transistor (BIGT), owing to its notable attributes in power density and compact dimensions, holds promising applications in the realm of high power converters. However, its characteristic of the voltage drop in diode mode controlled by gate‐emitter voltage poses significant challenges for low‐loss operation. This paper investigates the relationship between BIGT's on‐state voltage drop in diode mode and its gate‐emitter voltage in detail. By combining simulation and experimental analysis, recommended the gate‐emitter voltage values are provided. Furthermore, a novel driver optimization scheme is proposed to automatically lower the gate voltage during reverse conduction, which can effectively reduce the reverse on‐state losses of the BIGT. Experimental validation demonstrates a 10.6% reduction in reverse on‐state voltage drop, showcasing the efficacy of the proposed driver optimization scheme.https://doi.org/10.1049/pel2.12650HVDC power convertorspower convertorspower electronics |
| spellingShingle | Lei Qi Ze Li Xiangyu Zhang Jin Yang Yuanfang Lu Jingfei Wang Fuyue Wen Kefeng Wang Xinyu Hu Driver optimization of high power converter based on BIGT reverse conduction loss IET Power Electronics HVDC power convertors power convertors power electronics |
| title | Driver optimization of high power converter based on BIGT reverse conduction loss |
| title_full | Driver optimization of high power converter based on BIGT reverse conduction loss |
| title_fullStr | Driver optimization of high power converter based on BIGT reverse conduction loss |
| title_full_unstemmed | Driver optimization of high power converter based on BIGT reverse conduction loss |
| title_short | Driver optimization of high power converter based on BIGT reverse conduction loss |
| title_sort | driver optimization of high power converter based on bigt reverse conduction loss |
| topic | HVDC power convertors power convertors power electronics |
| url | https://doi.org/10.1049/pel2.12650 |
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