Driver optimization of high power converter based on BIGT reverse conduction loss

Driver optimization of high power converter based on BIGT reverse conduction loss

Abstract Bi‐mode Insulated Gate Transistor (BIGT), owing to its notable attributes in power density and compact dimensions, holds promising applications in the realm of high power converters. However, its characteristic of the voltage drop in diode mode controlled by gate‐emitter voltage poses signi...

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Bibliographic Details
Main Authors: Lei Qi, Ze Li, Xiangyu Zhang, Jin Yang, Yuanfang Lu, Jingfei Wang, Fuyue Wen, Kefeng Wang, Xinyu Hu
Format: Article
Language:English
Published: Wiley 2024-02-01
Series:IET Power Electronics
Subjects:
HVDC power convertors
power convertors
power electronics
Online Access:https://doi.org/10.1049/pel2.12650

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