Current-fed quasi-Z-source H7 inverter with reduced stress on SiC power devices
This paper discusses selected problems regarding a high-frequency improved current-fed quasi-Z-source inverter (iCFqZSI) designed and built with SiC power devices. At first, new, modified topology of the impedance network is presented. As the structure is derived from the series connection of two ne...
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| Format: | Article |
| Language: | English |
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Polish Academy of Sciences
2019-12-01
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| Series: | Bulletin of the Polish Academy of Sciences: Technical Sciences |
| Subjects: | |
| Online Access: | https://journals.pan.pl/Content/114925/PDF/10_1085-1094_01316_Bpast.No.67-6_13.01.20_K1.pdf |
| _version_ | 1811314184980267008 |
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| author | P. Trochimiuk M. Zdanowski J. Rabkowski |
| author_facet | P. Trochimiuk M. Zdanowski J. Rabkowski |
| author_sort | P. Trochimiuk |
| collection | DOAJ |
| description | This paper discusses selected problems regarding a high-frequency improved current-fed quasi-Z-source inverter (iCFqZSI) designed and built with SiC power devices. At first, new, modified topology of the impedance network is presented. As the structure is derived from the series connection of two networks, the voltage stress across the SiC diodes and the inductors is reduced by a factor of two. Therefore, the SiC MOSFETs may be switched with frequencies above 100 kHz and volume and weight of the passive components is decreased. Furthermore, additional leg with two SiC MOSFETs working as a bidirectional switch is added to limit the current stress during the short-through states. In order to verify the performance of the proposed solution a 6 kVA laboratory model was designed to connect a 400 V DC source (battery) and a 3£400 V grid. According to presented simulations and experimental results high-frequency iCFqZSI is bidirectional – it may act as an inverter, but also as a rectifier. Performed measurements show correct operation at switching frequency of 100 kHz, high quality of the input and output waveforms is observed. The additional leg increases efficiency by up to 0.6% – peak value is 97.8%. |
| first_indexed | 2024-04-13T11:07:34Z |
| format | Article |
| id | doaj.art-423ef60127284bb598180d1ec01bdad9 |
| institution | Directory Open Access Journal |
| issn | 2300-1917 |
| language | English |
| last_indexed | 2024-04-13T11:07:34Z |
| publishDate | 2019-12-01 |
| publisher | Polish Academy of Sciences |
| record_format | Article |
| series | Bulletin of the Polish Academy of Sciences: Technical Sciences |
| spelling | doaj.art-423ef60127284bb598180d1ec01bdad92022-12-22T02:49:13ZengPolish Academy of SciencesBulletin of the Polish Academy of Sciences: Technical Sciences2300-19172019-12-0167No. 610851094https://doi.org/10.24425/bpasts.2019.131568Current-fed quasi-Z-source H7 inverter with reduced stress on SiC power devicesP. TrochimiukM. ZdanowskiJ. RabkowskiThis paper discusses selected problems regarding a high-frequency improved current-fed quasi-Z-source inverter (iCFqZSI) designed and built with SiC power devices. At first, new, modified topology of the impedance network is presented. As the structure is derived from the series connection of two networks, the voltage stress across the SiC diodes and the inductors is reduced by a factor of two. Therefore, the SiC MOSFETs may be switched with frequencies above 100 kHz and volume and weight of the passive components is decreased. Furthermore, additional leg with two SiC MOSFETs working as a bidirectional switch is added to limit the current stress during the short-through states. In order to verify the performance of the proposed solution a 6 kVA laboratory model was designed to connect a 400 V DC source (battery) and a 3£400 V grid. According to presented simulations and experimental results high-frequency iCFqZSI is bidirectional – it may act as an inverter, but also as a rectifier. Performed measurements show correct operation at switching frequency of 100 kHz, high quality of the input and output waveforms is observed. The additional leg increases efficiency by up to 0.6% – peak value is 97.8%.https://journals.pan.pl/Content/114925/PDF/10_1085-1094_01316_Bpast.No.67-6_13.01.20_K1.pdfinverterssilicon carbidepower mosfetbatteryenergy storage |
| spellingShingle | P. Trochimiuk M. Zdanowski J. Rabkowski Current-fed quasi-Z-source H7 inverter with reduced stress on SiC power devices Bulletin of the Polish Academy of Sciences: Technical Sciences inverters silicon carbide power mosfet battery energy storage |
| title | Current-fed quasi-Z-source H7 inverter with reduced stress on SiC power devices |
| title_full | Current-fed quasi-Z-source H7 inverter with reduced stress on SiC power devices |
| title_fullStr | Current-fed quasi-Z-source H7 inverter with reduced stress on SiC power devices |
| title_full_unstemmed | Current-fed quasi-Z-source H7 inverter with reduced stress on SiC power devices |
| title_short | Current-fed quasi-Z-source H7 inverter with reduced stress on SiC power devices |
| title_sort | current fed quasi z source h7 inverter with reduced stress on sic power devices |
| topic | inverters silicon carbide power mosfet battery energy storage |
| url | https://journals.pan.pl/Content/114925/PDF/10_1085-1094_01316_Bpast.No.67-6_13.01.20_K1.pdf |
| work_keys_str_mv | AT ptrochimiuk currentfedquasizsourceh7inverterwithreducedstressonsicpowerdevices AT mzdanowski currentfedquasizsourceh7inverterwithreducedstressonsicpowerdevices AT jrabkowski currentfedquasizsourceh7inverterwithreducedstressonsicpowerdevices |