Size and Shape Evolution of GaAsSb-Capped InAs/GaAs Quantum Dots: Dependence on the Sb Content
Capping InAs/GaAs quantum dots (QDs) with a thin GaAsSb layer alters the QDs structural properties, leading to considerable changes in their optical properties. The increase of the Sb content induces a redshift of the emission energies, indicating a change in the buried QDs shape and size. The prese...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2019-10-01
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| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/9/10/530 |