Latent tracks of swift Bi ions in Si3N4

Latent tracks of swift Bi ions in Si3N4

Parameters such as track diameter and microstruture of latent tracks in polycrystalline Si _3 N _4 induced by 710 MeV Bi ions were studied using TEM and XRD techniques, and MD simulation. Experimental results are considered in terms of the framework of a ‘core–shell’ inelastic thermal spike (i-TS) m...

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Bibliographic Details
Main Authors: A Janse van Vuuren, A Ibrayeva, R A Rymzhanov, A Zhalmagambetova, J H O’Connell, V A Skuratov, V V Uglov, S V Zlotski, A E Volkov, M Zdorovets
Format: Article
Language:English
Published: IOP Publishing 2020-01-01
Series:Materials Research Express
Subjects:
swift heavy ions
latent tracks
electron microscopy
x-ray diffraction
molecular dynamics simulation
Online Access:https://doi.org/10.1088/2053-1591/ab72d3
Description
Summary:Parameters such as track diameter and microstruture of latent tracks in polycrystalline Si _3 N _4 induced by 710 MeV Bi ions were studied using TEM and XRD techniques, and MD simulation. Experimental results are considered in terms of the framework of a ‘core–shell’ inelastic thermal spike (i-TS) model. The average track radius determined by means of electron microscopy coincides with that deduced from computer modelling and is similar to the track core size predicted by the i-TS model using a boiling criterion. Indirect (XRD) techniques give a larger average latent track radius which is consistent with the integral nature of the signal collected from the probed volume of irradiated material.
ISSN:2053-1591

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