Latent tracks of swift Bi ions in Si3N4
Parameters such as track diameter and microstruture of latent tracks in polycrystalline Si _3 N _4 induced by 710 MeV Bi ions were studied using TEM and XRD techniques, and MD simulation. Experimental results are considered in terms of the framework of a ‘core–shell’ inelastic thermal spike (i-TS) m...
| Main Authors: | , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2020-01-01
|
| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/ab72d3 |
| _version_ | 1797746529477328896 |
|---|---|
| author | A Janse van Vuuren A Ibrayeva R A Rymzhanov A Zhalmagambetova J H O’Connell V A Skuratov V V Uglov S V Zlotski A E Volkov M Zdorovets |
| author_facet | A Janse van Vuuren A Ibrayeva R A Rymzhanov A Zhalmagambetova J H O’Connell V A Skuratov V V Uglov S V Zlotski A E Volkov M Zdorovets |
| author_sort | A Janse van Vuuren |
| collection | DOAJ |
| description | Parameters such as track diameter and microstruture of latent tracks in polycrystalline Si _3 N _4 induced by 710 MeV Bi ions were studied using TEM and XRD techniques, and MD simulation. Experimental results are considered in terms of the framework of a ‘core–shell’ inelastic thermal spike (i-TS) model. The average track radius determined by means of electron microscopy coincides with that deduced from computer modelling and is similar to the track core size predicted by the i-TS model using a boiling criterion. Indirect (XRD) techniques give a larger average latent track radius which is consistent with the integral nature of the signal collected from the probed volume of irradiated material. |
| first_indexed | 2024-03-12T15:38:06Z |
| format | Article |
| id | doaj.art-42dfd50ed3ee470bb8bcd9759db456e7 |
| institution | Directory Open Access Journal |
| issn | 2053-1591 |
| language | English |
| last_indexed | 2024-03-12T15:38:06Z |
| publishDate | 2020-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Materials Research Express |
| spelling | doaj.art-42dfd50ed3ee470bb8bcd9759db456e72023-08-09T16:07:02ZengIOP PublishingMaterials Research Express2053-15912020-01-017202551210.1088/2053-1591/ab72d3Latent tracks of swift Bi ions in Si3N4A Janse van Vuuren0https://orcid.org/0000-0002-5372-1149A Ibrayeva1R A Rymzhanov2https://orcid.org/0000-0002-7404-9769A Zhalmagambetova3J H O’Connell4https://orcid.org/0000-0002-3758-3997V A Skuratov5https://orcid.org/0000-0002-9016-8370V V Uglov6S V Zlotski7A E Volkov8M Zdorovets9CHRTEM, NMU, University Way , Summerstrand, Port Elizabeth, South AfricaL N Gumilyov Eurasian National University , Nur-Sultan, Kazakhstan; Institute of Nuclear Physics, Almaty, KazakhstanInstitute of Nuclear Physics, Almaty, Kazakhstan; FLNR, JINR, Joliot-Curie 6, 141980 Dubna, RussiaFLNR, JINR, Joliot-Curie 6, 141980 Dubna, RussiaCHRTEM, NMU, University Way , Summerstrand, Port Elizabeth, South AfricaFLNR, JINR, Joliot-Curie 6, 141980 Dubna, Russia; National Research Nuclear University MEPhI , Moscow, Russia; Dubna State University , Dubna, RussiaBelarusian State University , Minsk, Belarus; South Ural State University , Chelyabinsk, RussiaBelarusian State University , Minsk, BelarusFLNR, JINR, Joliot-Curie 6, 141980 Dubna, Russia; National Research Center ‘Kurchatov Institute, Moscow, Russia; Lebedev Physical Institute of the Russian Academy of Sciences, Moscow, Russia; National University of Science and Technology MISiS, RussiaInstitute of Nuclear Physics, Almaty, Kazakhstan; Ural Federal University , Yekaterinburg, RussiaParameters such as track diameter and microstruture of latent tracks in polycrystalline Si _3 N _4 induced by 710 MeV Bi ions were studied using TEM and XRD techniques, and MD simulation. Experimental results are considered in terms of the framework of a ‘core–shell’ inelastic thermal spike (i-TS) model. The average track radius determined by means of electron microscopy coincides with that deduced from computer modelling and is similar to the track core size predicted by the i-TS model using a boiling criterion. Indirect (XRD) techniques give a larger average latent track radius which is consistent with the integral nature of the signal collected from the probed volume of irradiated material.https://doi.org/10.1088/2053-1591/ab72d3swift heavy ionslatent trackselectron microscopyx-ray diffractionmolecular dynamics simulation |
| spellingShingle | A Janse van Vuuren A Ibrayeva R A Rymzhanov A Zhalmagambetova J H O’Connell V A Skuratov V V Uglov S V Zlotski A E Volkov M Zdorovets Latent tracks of swift Bi ions in Si3N4 Materials Research Express swift heavy ions latent tracks electron microscopy x-ray diffraction molecular dynamics simulation |
| title | Latent tracks of swift Bi ions in Si3N4 |
| title_full | Latent tracks of swift Bi ions in Si3N4 |
| title_fullStr | Latent tracks of swift Bi ions in Si3N4 |
| title_full_unstemmed | Latent tracks of swift Bi ions in Si3N4 |
| title_short | Latent tracks of swift Bi ions in Si3N4 |
| title_sort | latent tracks of swift bi ions in si3n4 |
| topic | swift heavy ions latent tracks electron microscopy x-ray diffraction molecular dynamics simulation |
| url | https://doi.org/10.1088/2053-1591/ab72d3 |
| work_keys_str_mv | AT ajansevanvuuren latenttracksofswiftbiionsinsi3n4 AT aibrayeva latenttracksofswiftbiionsinsi3n4 AT rarymzhanov latenttracksofswiftbiionsinsi3n4 AT azhalmagambetova latenttracksofswiftbiionsinsi3n4 AT jhoconnell latenttracksofswiftbiionsinsi3n4 AT vaskuratov latenttracksofswiftbiionsinsi3n4 AT vvuglov latenttracksofswiftbiionsinsi3n4 AT svzlotski latenttracksofswiftbiionsinsi3n4 AT aevolkov latenttracksofswiftbiionsinsi3n4 AT mzdorovets latenttracksofswiftbiionsinsi3n4 |