Video Monitoring Application of CMOS 4T-PPD-APS Under γ-ray Radiation
In this paper, we discuss the potential use of four transistor active pixel sensor (4T-APS) as a video monitor at a nuclear accident site with a high level of γ radiation. The resistance and radiation responses to γ radiation were investigated by radiation experiments using 137Cs...
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| Format: | Article |
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MDPI AG
2019-01-01
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| Series: | Sensors |
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| Online Access: | http://www.mdpi.com/1424-8220/19/2/359 |
| _version_ | 1817993400391041024 |
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| author | Shoulong Xu Shuliang Zou Yongchao Han Yantao Qu Taoyi Zhang |
| author_facet | Shoulong Xu Shuliang Zou Yongchao Han Yantao Qu Taoyi Zhang |
| author_sort | Shoulong Xu |
| collection | DOAJ |
| description | In this paper, we discuss the potential use of four transistor active pixel sensor (4T-APS) as a video monitor at a nuclear accident site with a high level of γ radiation. The resistance and radiation responses to γ radiation were investigated by radiation experiments using 137Cs and 60Co γ-ray sources. The radiation resistance of 4T-APS was studied by testing the mean and the maximum dark current of the sensors after irradiation. A random spatial distribution of radiation response events was observed upon analyzing these events on the video images in a given time during irradiation. The background dependence of the 4T-APS was also studied by comparing the grayscale incremental value of the images with different color and grayscale backgrounds: the radiation response events were obvious on the images with a background having a smaller grayscale value or a deeper color. Finally, the color saturation and resolution of the images were tested using a vector oscilloscope and a test card. When the total ionizing dose was less than or equal to the damage threshold, no significant performance deterioration of 4T-APS was observed in an environment with sufficient light. |
| first_indexed | 2024-04-14T01:39:20Z |
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| id | doaj.art-42e5f77f3a3c427d9d8b5921b776c092 |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-04-14T01:39:20Z |
| publishDate | 2019-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj.art-42e5f77f3a3c427d9d8b5921b776c0922022-12-22T02:19:49ZengMDPI AGSensors1424-82202019-01-0119235910.3390/s19020359s19020359Video Monitoring Application of CMOS 4T-PPD-APS Under γ-ray RadiationShoulong Xu0Shuliang Zou1Yongchao Han2Yantao Qu3Taoyi Zhang4School of Resource Environment and Safety Engineering, University of South China, Hengyang 421001, ChinaSchool of Resource Environment and Safety Engineering, University of South China, Hengyang 421001, ChinaChina Institute of Atomic Energy, Beijing 102413, ChinaChina Institute of Atomic Energy, Beijing 102413, ChinaBeijing Institute of Control Engineering, Beijing 100084, ChinaIn this paper, we discuss the potential use of four transistor active pixel sensor (4T-APS) as a video monitor at a nuclear accident site with a high level of γ radiation. The resistance and radiation responses to γ radiation were investigated by radiation experiments using 137Cs and 60Co γ-ray sources. The radiation resistance of 4T-APS was studied by testing the mean and the maximum dark current of the sensors after irradiation. A random spatial distribution of radiation response events was observed upon analyzing these events on the video images in a given time during irradiation. The background dependence of the 4T-APS was also studied by comparing the grayscale incremental value of the images with different color and grayscale backgrounds: the radiation response events were obvious on the images with a background having a smaller grayscale value or a deeper color. Finally, the color saturation and resolution of the images were tested using a vector oscilloscope and a test card. When the total ionizing dose was less than or equal to the damage threshold, no significant performance deterioration of 4T-APS was observed in an environment with sufficient light.http://www.mdpi.com/1424-8220/19/2/359ionizing radiationradiation responseradiation interference4T-PPD-APS |
| spellingShingle | Shoulong Xu Shuliang Zou Yongchao Han Yantao Qu Taoyi Zhang Video Monitoring Application of CMOS 4T-PPD-APS Under γ-ray Radiation Sensors ionizing radiation radiation response radiation interference 4T-PPD-APS |
| title | Video Monitoring Application of CMOS 4T-PPD-APS Under γ-ray Radiation |
| title_full | Video Monitoring Application of CMOS 4T-PPD-APS Under γ-ray Radiation |
| title_fullStr | Video Monitoring Application of CMOS 4T-PPD-APS Under γ-ray Radiation |
| title_full_unstemmed | Video Monitoring Application of CMOS 4T-PPD-APS Under γ-ray Radiation |
| title_short | Video Monitoring Application of CMOS 4T-PPD-APS Under γ-ray Radiation |
| title_sort | video monitoring application of cmos 4t ppd aps under γ ray radiation |
| topic | ionizing radiation radiation response radiation interference 4T-PPD-APS |
| url | http://www.mdpi.com/1424-8220/19/2/359 |
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