Tungsten-Based Cost-Effective Gas Sensors for H<sub>2</sub>S Detection
Tungsten trioxide thin films were deposited on silicon substrates by non-reactive RF sputtering from a WO<sub>3</sub> target at room temperature. The WO<sub>3</sub> films were post-annealed at two different temperatures, 400 °C and 500 °C. The morphological and microstructura...
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-10-01
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| Series: | Chemosensors |
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| Online Access: | https://www.mdpi.com/2227-9040/9/11/295 |
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| author | Didier Fasquelle Nathalie Verbrugghe Stéphanie Députier |
| author_facet | Didier Fasquelle Nathalie Verbrugghe Stéphanie Députier |
| author_sort | Didier Fasquelle |
| collection | DOAJ |
| description | Tungsten trioxide thin films were deposited on silicon substrates by non-reactive RF sputtering from a WO<sub>3</sub> target at room temperature. The WO<sub>3</sub> films were post-annealed at two different temperatures, 400 °C and 500 °C. The morphological and microstructural properties of these films were analyzed by using atomic force microscopy and X-ray diffraction. X-ray diffraction patterns only show WO<sub>3</sub> oxide phases. The AFM images show different morphologies with smaller grains for the film annealed at 400 °C. WO<sub>3</sub> sensing films and W heating elements were embedded in commercial cases for the fabrication of cost-effective gas sensors. The sensitivity and dynamic response of the sensors were analyzed under various concentrations of H<sub>2</sub>S, from 20 to 100 ppm, at SIMTRONICS SAS (3M Company, Saint Paul, MN, USA). A good sensitivity G/G<sub>0</sub> of about 6.6 under H<sub>2</sub>S 100 ppm was obtained with the best sensor. An interesting dynamic response was observed in particular with a short response time. Additionally, the evolution of the sensitivity was studied, and a conduction model was proposed for explaining the conduction mechanism under H<sub>2</sub>S exposition. |
| first_indexed | 2024-03-10T05:36:10Z |
| format | Article |
| id | doaj.art-42eece2459834b698c850a4f0482522d |
| institution | Directory Open Access Journal |
| issn | 2227-9040 |
| language | English |
| last_indexed | 2024-03-10T05:36:10Z |
| publishDate | 2021-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Chemosensors |
| spelling | doaj.art-42eece2459834b698c850a4f0482522d2023-11-22T22:53:44ZengMDPI AGChemosensors2227-90402021-10-0191129510.3390/chemosensors9110295Tungsten-Based Cost-Effective Gas Sensors for H<sub>2</sub>S DetectionDidier Fasquelle0Nathalie Verbrugghe1Stéphanie Députier2Unité de Dynamique et Structure des Matériaux Moléculaires (UDSMM), Université du Littoral Côte d’Opale (ULCO), BP699, 62228 Calais, FranceUnité de Dynamique et Structure des Matériaux Moléculaires (UDSMM), Université du Littoral Côte d’Opale (ULCO), BP699, 62228 Calais, FranceUniversité de Rennes, CNRS, ISCR_UMR 6226, F-35000 Rennes, FranceTungsten trioxide thin films were deposited on silicon substrates by non-reactive RF sputtering from a WO<sub>3</sub> target at room temperature. The WO<sub>3</sub> films were post-annealed at two different temperatures, 400 °C and 500 °C. The morphological and microstructural properties of these films were analyzed by using atomic force microscopy and X-ray diffraction. X-ray diffraction patterns only show WO<sub>3</sub> oxide phases. The AFM images show different morphologies with smaller grains for the film annealed at 400 °C. WO<sub>3</sub> sensing films and W heating elements were embedded in commercial cases for the fabrication of cost-effective gas sensors. The sensitivity and dynamic response of the sensors were analyzed under various concentrations of H<sub>2</sub>S, from 20 to 100 ppm, at SIMTRONICS SAS (3M Company, Saint Paul, MN, USA). A good sensitivity G/G<sub>0</sub> of about 6.6 under H<sub>2</sub>S 100 ppm was obtained with the best sensor. An interesting dynamic response was observed in particular with a short response time. Additionally, the evolution of the sensitivity was studied, and a conduction model was proposed for explaining the conduction mechanism under H<sub>2</sub>S exposition.https://www.mdpi.com/2227-9040/9/11/295WO<sub>3</sub> thin filmgas sensorRF sputteringhydrogen sulfide |
| spellingShingle | Didier Fasquelle Nathalie Verbrugghe Stéphanie Députier Tungsten-Based Cost-Effective Gas Sensors for H<sub>2</sub>S Detection Chemosensors WO<sub>3</sub> thin film gas sensor RF sputtering hydrogen sulfide |
| title | Tungsten-Based Cost-Effective Gas Sensors for H<sub>2</sub>S Detection |
| title_full | Tungsten-Based Cost-Effective Gas Sensors for H<sub>2</sub>S Detection |
| title_fullStr | Tungsten-Based Cost-Effective Gas Sensors for H<sub>2</sub>S Detection |
| title_full_unstemmed | Tungsten-Based Cost-Effective Gas Sensors for H<sub>2</sub>S Detection |
| title_short | Tungsten-Based Cost-Effective Gas Sensors for H<sub>2</sub>S Detection |
| title_sort | tungsten based cost effective gas sensors for h sub 2 sub s detection |
| topic | WO<sub>3</sub> thin film gas sensor RF sputtering hydrogen sulfide |
| url | https://www.mdpi.com/2227-9040/9/11/295 |
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