Evaluation of gate drive circuit effect in cascode GaN-based applications
This work evaluates the influence of gate drive circuitry to cascode GaN device’s switching waveforms. This is done by comparing three PCBs using three double-pulse-test (DPT) with different gate driving loop design. Among important parasitic elements, source-side inductance shows a significant impa...
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Polish Academy of Sciences
2021-03-01
|
| Series: | Bulletin of the Polish Academy of Sciences: Technical Sciences |
| Subjects: | |
| Online Access: | https://journals.pan.pl/Content/119426/PDF/19_02056_Bpast.No.69(2)_26.04.21_K1_A_OK.pdf |
| _version_ | 1828443252937719808 |
|---|---|
| author | Q.Y. Tan E.M.S. Narayanan |
| author_facet | Q.Y. Tan E.M.S. Narayanan |
| author_sort | Q.Y. Tan |
| collection | DOAJ |
| description | This work evaluates the influence of gate drive circuitry to cascode GaN device’s switching waveforms. This is done by comparing three PCBs using three double-pulse-test (DPT) with different gate driving loop design. Among important parasitic elements, source-side inductance shows a significant impact to gate-source voltage waveform. A simulation model based on experimental measurement of the cascode GaNFET used in this work is modified by author. The simulation model is implemented in a synchronous buck converter topology and hereby to assess the impact of gate driving loop of cascode GaN device in both continuous conduction mode (CCM) and critical conduction mode (CRM). Apart from simulation, a synchronous buck converter prototype is presented for experimental evaluation, which shows a 99.15% efficiency at 5A under soft-switching operation (CRM) with a 59ns dead-time. |
| first_indexed | 2024-12-10T21:26:01Z |
| format | Article |
| id | doaj.art-431bd233c9e34faf86742876350251ef |
| institution | Directory Open Access Journal |
| issn | 2300-1917 |
| language | English |
| last_indexed | 2024-12-10T21:26:01Z |
| publishDate | 2021-03-01 |
| publisher | Polish Academy of Sciences |
| record_format | Article |
| series | Bulletin of the Polish Academy of Sciences: Technical Sciences |
| spelling | doaj.art-431bd233c9e34faf86742876350251ef2022-12-22T01:32:59ZengPolish Academy of SciencesBulletin of the Polish Academy of Sciences: Technical Sciences2300-19172021-03-01692https://doi.org/10.24425/bpasts.2021.136742Evaluation of gate drive circuit effect in cascode GaN-based applicationsQ.Y. Tan0E.M.S. Narayanan1Department of Electronic and Electrical Engineering, The University of Sheffield, S1 3JD, UKDepartment of Electronic and Electrical Engineering, The University of Sheffield, S1 3JD, UKThis work evaluates the influence of gate drive circuitry to cascode GaN device’s switching waveforms. This is done by comparing three PCBs using three double-pulse-test (DPT) with different gate driving loop design. Among important parasitic elements, source-side inductance shows a significant impact to gate-source voltage waveform. A simulation model based on experimental measurement of the cascode GaNFET used in this work is modified by author. The simulation model is implemented in a synchronous buck converter topology and hereby to assess the impact of gate driving loop of cascode GaN device in both continuous conduction mode (CCM) and critical conduction mode (CRM). Apart from simulation, a synchronous buck converter prototype is presented for experimental evaluation, which shows a 99.15% efficiency at 5A under soft-switching operation (CRM) with a 59ns dead-time.https://journals.pan.pl/Content/119426/PDF/19_02056_Bpast.No.69(2)_26.04.21_K1_A_OK.pdfcascode ganfetsparasiticsbuck-convertergate drive design |
| spellingShingle | Q.Y. Tan E.M.S. Narayanan Evaluation of gate drive circuit effect in cascode GaN-based applications Bulletin of the Polish Academy of Sciences: Technical Sciences cascode ganfets parasitics buck-converter gate drive design |
| title | Evaluation of gate drive circuit effect in cascode GaN-based applications |
| title_full | Evaluation of gate drive circuit effect in cascode GaN-based applications |
| title_fullStr | Evaluation of gate drive circuit effect in cascode GaN-based applications |
| title_full_unstemmed | Evaluation of gate drive circuit effect in cascode GaN-based applications |
| title_short | Evaluation of gate drive circuit effect in cascode GaN-based applications |
| title_sort | evaluation of gate drive circuit effect in cascode gan based applications |
| topic | cascode ganfets parasitics buck-converter gate drive design |
| url | https://journals.pan.pl/Content/119426/PDF/19_02056_Bpast.No.69(2)_26.04.21_K1_A_OK.pdf |
| work_keys_str_mv | AT qytan evaluationofgatedrivecircuiteffectincascodeganbasedapplications AT emsnarayanan evaluationofgatedrivecircuiteffectincascodeganbasedapplications |