Electric field control of anomalous Hall effect in CaIrO3/CaMnO3 heterostructure

We demonstrate an electric field control of an anomalous Hall effect emerging in CaIrO3/CaMnO3 heterostructures. We fabricate both electron-type and hole-type carrier samples by tuning epitaxial strain and, then, control the carrier density in a CaIrO3 layer via electric double layer gating techniqu...

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Main Authors: R. Nishino, T. C. Fujita, M. Kawasaki
Format: Article
Language:English
Published: AIP Publishing LLC 2022-08-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/5.0097881
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author R. Nishino
T. C. Fujita
M. Kawasaki
author_facet R. Nishino
T. C. Fujita
M. Kawasaki
author_sort R. Nishino
collection DOAJ
description We demonstrate an electric field control of an anomalous Hall effect emerging in CaIrO3/CaMnO3 heterostructures. We fabricate both electron-type and hole-type carrier samples by tuning epitaxial strain and, then, control the carrier density in a CaIrO3 layer via electric double layer gating technique. As the Fermi energy of CaIrO3 is tuned close to the Dirac line node, anomalous Hall conductivity is enlarged in both carrier-type samples. This result reveals that the anomalous Hall effect comes from the intrinsic origin, reflecting the Dirac-like dispersion in CaIrO3. We propose that band splitting induced by the interface ferromagnetism yields several band crossing points near the Dirac line node. These points act as a source of the Berry curvature and contribute to the anomalous Hall effect.
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spelling doaj.art-43298299f255426e9e75e281495da8d92022-12-22T03:49:18ZengAIP Publishing LLCAPL Materials2166-532X2022-08-01108081104081104-510.1063/5.0097881Electric field control of anomalous Hall effect in CaIrO3/CaMnO3 heterostructureR. Nishino0T. C. Fujita1M. Kawasaki2Department of Applied Physics and Quantum Phase Electronics Center, University of Tokyo, Tokyo 113-8656, JapanDepartment of Applied Physics and Quantum Phase Electronics Center, University of Tokyo, Tokyo 113-8656, JapanDepartment of Applied Physics and Quantum Phase Electronics Center, University of Tokyo, Tokyo 113-8656, JapanWe demonstrate an electric field control of an anomalous Hall effect emerging in CaIrO3/CaMnO3 heterostructures. We fabricate both electron-type and hole-type carrier samples by tuning epitaxial strain and, then, control the carrier density in a CaIrO3 layer via electric double layer gating technique. As the Fermi energy of CaIrO3 is tuned close to the Dirac line node, anomalous Hall conductivity is enlarged in both carrier-type samples. This result reveals that the anomalous Hall effect comes from the intrinsic origin, reflecting the Dirac-like dispersion in CaIrO3. We propose that band splitting induced by the interface ferromagnetism yields several band crossing points near the Dirac line node. These points act as a source of the Berry curvature and contribute to the anomalous Hall effect.http://dx.doi.org/10.1063/5.0097881
spellingShingle R. Nishino
T. C. Fujita
M. Kawasaki
Electric field control of anomalous Hall effect in CaIrO3/CaMnO3 heterostructure
APL Materials
title Electric field control of anomalous Hall effect in CaIrO3/CaMnO3 heterostructure
title_full Electric field control of anomalous Hall effect in CaIrO3/CaMnO3 heterostructure
title_fullStr Electric field control of anomalous Hall effect in CaIrO3/CaMnO3 heterostructure
title_full_unstemmed Electric field control of anomalous Hall effect in CaIrO3/CaMnO3 heterostructure
title_short Electric field control of anomalous Hall effect in CaIrO3/CaMnO3 heterostructure
title_sort electric field control of anomalous hall effect in cairo3 camno3 heterostructure
url http://dx.doi.org/10.1063/5.0097881
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AT tcfujita electricfieldcontrolofanomaloushalleffectincairo3camno3heterostructure
AT mkawasaki electricfieldcontrolofanomaloushalleffectincairo3camno3heterostructure