Catalyst-free synthesis of sub-5 nm silicon nanowire arrays with massive lattice contraction and wide bandgap

The preparation of quantum silicon nanowires, materials with potential application in high-performance nanodevices, is challenging. Here, the authors synthesize vertically aligned sub-5 nm silicon nanowires via a vapor phase silicon etching process; the resulting material features unusual lattice re...

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Main Authors: Sen Gao, Sanghyun Hong, Soohyung Park, Hyun Young Jung, Wentao Liang, Yonghee Lee, Chi Won Ahn, Ji Young Byun, Juyeon Seo, Myung Gwan Hahm, Hyehee Kim, Kiwoong Kim, Yeonjin Yi, Hailong Wang, Moneesh Upmanyu, Sung-Goo Lee, Yoshikazu Homma, Humberto Terrones, Yung Joon Jung
Format: Article
Language:English
Published: Nature Portfolio 2022-06-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-022-31174-x
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author Sen Gao
Sanghyun Hong
Soohyung Park
Hyun Young Jung
Wentao Liang
Yonghee Lee
Chi Won Ahn
Ji Young Byun
Juyeon Seo
Myung Gwan Hahm
Hyehee Kim
Kiwoong Kim
Yeonjin Yi
Hailong Wang
Moneesh Upmanyu
Sung-Goo Lee
Yoshikazu Homma
Humberto Terrones
Yung Joon Jung
author_facet Sen Gao
Sanghyun Hong
Soohyung Park
Hyun Young Jung
Wentao Liang
Yonghee Lee
Chi Won Ahn
Ji Young Byun
Juyeon Seo
Myung Gwan Hahm
Hyehee Kim
Kiwoong Kim
Yeonjin Yi
Hailong Wang
Moneesh Upmanyu
Sung-Goo Lee
Yoshikazu Homma
Humberto Terrones
Yung Joon Jung
author_sort Sen Gao
collection DOAJ
description The preparation of quantum silicon nanowires, materials with potential application in high-performance nanodevices, is challenging. Here, the authors synthesize vertically aligned sub-5 nm silicon nanowires via a vapor phase silicon etching process; the resulting material features unusual lattice reduction and significant phonon and electronic confinement effects.
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spelling doaj.art-4349107a619842719b49a7565f2af2de2022-12-22T00:32:05ZengNature PortfolioNature Communications2041-17232022-06-011311910.1038/s41467-022-31174-xCatalyst-free synthesis of sub-5 nm silicon nanowire arrays with massive lattice contraction and wide bandgapSen Gao0Sanghyun Hong1Soohyung Park2Hyun Young Jung3Wentao Liang4Yonghee Lee5Chi Won Ahn6Ji Young Byun7Juyeon Seo8Myung Gwan Hahm9Hyehee Kim10Kiwoong Kim11Yeonjin Yi12Hailong Wang13Moneesh Upmanyu14Sung-Goo Lee15Yoshikazu Homma16Humberto Terrones17Yung Joon Jung18Department of Mechanical and Industrial Engineering, Northeastern UniversityDepartment of Mechanical and Industrial Engineering, Northeastern UniversityKorea Institute of Science and TechnologyDepartment of Energy Engineering, Gyeongsang National UniversityKostas Advanced Nano-Characterization Facility, Kostas Research Institute, Northeastern UniversityNational Nano Fab Center, Korea Advanced Institute of Science and TechnologyNational Nano Fab Center, Korea Advanced Institute of Science and TechnologyKorea Institute of Science and TechnologyDepartment of Mechanical and Industrial Engineering, Northeastern UniversityDepartment of Materials Science and Engineering, Inha UniversityDepartment of Mechanical and Industrial Engineering, Northeastern UniversityInstitute of Physics and Applied Physics, Yonsei UniversityInstitute of Physics and Applied Physics, Yonsei UniversityCAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Modern Mechanics, University of Science and Technology of ChinaDepartment of Mechanical and Industrial Engineering, Northeastern UniversityAdvanced Materials Division, Korea Research Institute of Chemical TechnologyDepartment of Physics, Tokyo University of ScienceDepartment of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic InstituteDepartment of Mechanical and Industrial Engineering, Northeastern UniversityThe preparation of quantum silicon nanowires, materials with potential application in high-performance nanodevices, is challenging. Here, the authors synthesize vertically aligned sub-5 nm silicon nanowires via a vapor phase silicon etching process; the resulting material features unusual lattice reduction and significant phonon and electronic confinement effects.https://doi.org/10.1038/s41467-022-31174-x
spellingShingle Sen Gao
Sanghyun Hong
Soohyung Park
Hyun Young Jung
Wentao Liang
Yonghee Lee
Chi Won Ahn
Ji Young Byun
Juyeon Seo
Myung Gwan Hahm
Hyehee Kim
Kiwoong Kim
Yeonjin Yi
Hailong Wang
Moneesh Upmanyu
Sung-Goo Lee
Yoshikazu Homma
Humberto Terrones
Yung Joon Jung
Catalyst-free synthesis of sub-5 nm silicon nanowire arrays with massive lattice contraction and wide bandgap
Nature Communications
title Catalyst-free synthesis of sub-5 nm silicon nanowire arrays with massive lattice contraction and wide bandgap
title_full Catalyst-free synthesis of sub-5 nm silicon nanowire arrays with massive lattice contraction and wide bandgap
title_fullStr Catalyst-free synthesis of sub-5 nm silicon nanowire arrays with massive lattice contraction and wide bandgap
title_full_unstemmed Catalyst-free synthesis of sub-5 nm silicon nanowire arrays with massive lattice contraction and wide bandgap
title_short Catalyst-free synthesis of sub-5 nm silicon nanowire arrays with massive lattice contraction and wide bandgap
title_sort catalyst free synthesis of sub 5 nm silicon nanowire arrays with massive lattice contraction and wide bandgap
url https://doi.org/10.1038/s41467-022-31174-x
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