Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs
In this letter, we have studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) with different interface Si donor incorporation which is tuned during the deposition process of LPCVD-SiNx which is adopted as gate dielectric and passivation lay...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2017-12-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5000126 |
| _version_ | 1819267583136759808 |
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| author | Liang Song Kai Fu Zhili Zhang Shichuang Sun Weiyi Li Guohao Yu Ronghui Hao Yaming Fan Wenhua Shi Yong Cai Baoshun Zhang |
| author_facet | Liang Song Kai Fu Zhili Zhang Shichuang Sun Weiyi Li Guohao Yu Ronghui Hao Yaming Fan Wenhua Shi Yong Cai Baoshun Zhang |
| author_sort | Liang Song |
| collection | DOAJ |
| description | In this letter, we have studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) with different interface Si donor incorporation which is tuned during the deposition process of LPCVD-SiNx which is adopted as gate dielectric and passivation layer. Current collapse of the MIS-HEMTs without field plate is suppressed more effectively by increasing the SiH2Cl2/NH3 flow ratio and the normalized dynamic on-resistance (RON) is reduced two orders magnitude after off-state VDS stress of 600 V for 10 ms. Through interface characterization, we have found that the interface deep-level traps distribution with high Si donor incorporation by increasing the SiH2Cl2/NH3 flow ratio is lowered. It’s indicated that the Si donors are most likely to fill and screen the deep-level traps at the interface resulting in the suppression of slow trapping process and the virtual gate effect. Although the Si donor incorporation brings about the increase of gate leakage current (IGS), no clear degradation of breakdown voltage can be seen by choosing appropriate SiH2Cl2/NH3 flow ratio. |
| first_indexed | 2024-12-23T21:19:28Z |
| format | Article |
| id | doaj.art-4359047cb0e64571ba0de43cfe273c5f |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-23T21:19:28Z |
| publishDate | 2017-12-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-4359047cb0e64571ba0de43cfe273c5f2022-12-21T17:30:47ZengAIP Publishing LLCAIP Advances2158-32262017-12-01712125023125023-710.1063/1.5000126086712ADVInterface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTsLiang Song0Kai Fu1Zhili Zhang2Shichuang Sun3Weiyi Li4Guohao Yu5Ronghui Hao6Yaming Fan7Wenhua Shi8Yong Cai9Baoshun Zhang10School of Nano Technology and Nano Bionics, University of Science and Technology of China, Suzhou 215123, People’s Republic of ChinaKey Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, People’s Republic of ChinaKey Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, People’s Republic of ChinaKey Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, People’s Republic of ChinaKey Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, People’s Republic of ChinaKey Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, People’s Republic of ChinaKey Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, People’s Republic of ChinaKey Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, People’s Republic of ChinaKey Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, People’s Republic of ChinaKey Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, People’s Republic of ChinaKey Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, People’s Republic of ChinaIn this letter, we have studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) with different interface Si donor incorporation which is tuned during the deposition process of LPCVD-SiNx which is adopted as gate dielectric and passivation layer. Current collapse of the MIS-HEMTs without field plate is suppressed more effectively by increasing the SiH2Cl2/NH3 flow ratio and the normalized dynamic on-resistance (RON) is reduced two orders magnitude after off-state VDS stress of 600 V for 10 ms. Through interface characterization, we have found that the interface deep-level traps distribution with high Si donor incorporation by increasing the SiH2Cl2/NH3 flow ratio is lowered. It’s indicated that the Si donors are most likely to fill and screen the deep-level traps at the interface resulting in the suppression of slow trapping process and the virtual gate effect. Although the Si donor incorporation brings about the increase of gate leakage current (IGS), no clear degradation of breakdown voltage can be seen by choosing appropriate SiH2Cl2/NH3 flow ratio.http://dx.doi.org/10.1063/1.5000126 |
| spellingShingle | Liang Song Kai Fu Zhili Zhang Shichuang Sun Weiyi Li Guohao Yu Ronghui Hao Yaming Fan Wenhua Shi Yong Cai Baoshun Zhang Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs AIP Advances |
| title | Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs |
| title_full | Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs |
| title_fullStr | Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs |
| title_full_unstemmed | Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs |
| title_short | Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs |
| title_sort | interface si donor control to improve dynamic performance of algan gan mis hemts |
| url | http://dx.doi.org/10.1063/1.5000126 |
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