Mobility in n-doped wurtzite III-Nitrides
A study of the mobility of n-doped wurtzite III-Nitrides is reported. We have determined the nonequilibrium thermodynamic state of the III-Nitrides systems driven far away from equilibrium by a strong electric field in the steady state, which follows after a very fast transient. The dependence of th...
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| Format: | Article |
| Language: | English |
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Associação Brasileira de Metalurgia e Materiais (ABM); Associação Brasileira de Cerâmica (ABC); Associação Brasileira de Polímeros (ABPol)
2003-01-01
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| Series: | Materials Research |
| Subjects: | |
| Online Access: | http://www.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392003000100002 |
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| author | C.G. Rodrigues Valder N. Freire Áurea R. Vasconcellos Roberto Luzzi |
| author_facet | C.G. Rodrigues Valder N. Freire Áurea R. Vasconcellos Roberto Luzzi |
| author_sort | C.G. Rodrigues |
| collection | DOAJ |
| description | A study of the mobility of n-doped wurtzite III-Nitrides is reported. We have determined the nonequilibrium thermodynamic state of the III-Nitrides systems driven far away from equilibrium by a strong electric field in the steady state, which follows after a very fast transient. The dependence of the mobility (which depends on the nonequilibrium thermodynamic state of the sample) on the electric field strength is derived, which decreases with the strength of electric field. We analyzed the contributions to the mobility arising out of the different channels of electron scattering, namely, the polar optic, deformation, piezoelectric, interactions with the phonons, and with impurities. The case of n-InN, n-GaN, and n-AlN have been analyzed: as expected the main contribution comes from the polar-optic interactions in these strongly polar semiconductors. The other interactions are in decreasing order, the deformation acoustic, the piezoelectric, and the one due to impurities. |
| first_indexed | 2024-12-22T07:57:27Z |
| format | Article |
| id | doaj.art-435a0ef680ad46b09f27bd1eb73caaf1 |
| institution | Directory Open Access Journal |
| issn | 1516-1439 |
| language | English |
| last_indexed | 2024-12-22T07:57:27Z |
| publishDate | 2003-01-01 |
| publisher | Associação Brasileira de Metalurgia e Materiais (ABM); Associação Brasileira de Cerâmica (ABC); Associação Brasileira de Polímeros (ABPol) |
| record_format | Article |
| series | Materials Research |
| spelling | doaj.art-435a0ef680ad46b09f27bd1eb73caaf12022-12-21T18:33:20ZengAssociação Brasileira de Metalurgia e Materiais (ABM); Associação Brasileira de Cerâmica (ABC); Associação Brasileira de Polímeros (ABPol)Materials Research1516-14392003-01-0161010410.1590/S1516-14392003000100002Mobility in n-doped wurtzite III-NitridesC.G. RodriguesValder N. FreireÁurea R. VasconcellosRoberto LuzziA study of the mobility of n-doped wurtzite III-Nitrides is reported. We have determined the nonequilibrium thermodynamic state of the III-Nitrides systems driven far away from equilibrium by a strong electric field in the steady state, which follows after a very fast transient. The dependence of the mobility (which depends on the nonequilibrium thermodynamic state of the sample) on the electric field strength is derived, which decreases with the strength of electric field. We analyzed the contributions to the mobility arising out of the different channels of electron scattering, namely, the polar optic, deformation, piezoelectric, interactions with the phonons, and with impurities. The case of n-InN, n-GaN, and n-AlN have been analyzed: as expected the main contribution comes from the polar-optic interactions in these strongly polar semiconductors. The other interactions are in decreasing order, the deformation acoustic, the piezoelectric, and the one due to impurities.http://www.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392003000100002conductivity phenomena in semiconductorsscattering mechanisms |
| spellingShingle | C.G. Rodrigues Valder N. Freire Áurea R. Vasconcellos Roberto Luzzi Mobility in n-doped wurtzite III-Nitrides Materials Research conductivity phenomena in semiconductors scattering mechanisms |
| title | Mobility in n-doped wurtzite III-Nitrides |
| title_full | Mobility in n-doped wurtzite III-Nitrides |
| title_fullStr | Mobility in n-doped wurtzite III-Nitrides |
| title_full_unstemmed | Mobility in n-doped wurtzite III-Nitrides |
| title_short | Mobility in n-doped wurtzite III-Nitrides |
| title_sort | mobility in n doped wurtzite iii nitrides |
| topic | conductivity phenomena in semiconductors scattering mechanisms |
| url | http://www.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392003000100002 |
| work_keys_str_mv | AT cgrodrigues mobilityinndopedwurtziteiiinitrides AT valdernfreire mobilityinndopedwurtziteiiinitrides AT aurearvasconcellos mobilityinndopedwurtziteiiinitrides AT robertoluzzi mobilityinndopedwurtziteiiinitrides |