Saturation of Open‐Circuit Voltage at Higher Light Intensity Caused by Interfacial Defects and Nonradiative Recombination Losses in Perovskite Solar Cells
Abstract A new analytical expression that directly relates the open‐circuit voltage (Voc) in perovskite solar cells (PSCs) to the quasi‐Fermi level splitting (QFLS), interface energy offsets, and nonradiative recombination losses has been derived. It is found that the QFLS of the active layer plays...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2023-01-01
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| Series: | Advanced Materials Interfaces |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/admi.202201578 |
| _version_ | 1797772446682578944 |
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| author | David Ompong Kiran Sreedhar Ram Daniel Dodzi Yao Setsoafia Hooman Mehdizadeh Rad Jai Singh |
| author_facet | David Ompong Kiran Sreedhar Ram Daniel Dodzi Yao Setsoafia Hooman Mehdizadeh Rad Jai Singh |
| author_sort | David Ompong |
| collection | DOAJ |
| description | Abstract A new analytical expression that directly relates the open‐circuit voltage (Voc) in perovskite solar cells (PSCs) to the quasi‐Fermi level splitting (QFLS), interface energy offsets, and nonradiative recombination losses has been derived. It is found that the QFLS of the active layer plays a dominant role in enhancing Voc of PSCs. The newly derived Voc is applied to two PSCs with the hole transport layer (HTL) of poly[bis(4‐phenyl)(2,4,6‐trimethylphenyl)amine], and poly(3‐hexylthiophene‐2,5‐diyl) (P3HT) and found that the first PSC has a higher Voc, which agrees well with the experimental results. It is found that both PSCs exhibit saturation of Voc at the higher charge carrier generation rates and hence at higher light intensities. The lower Voc in PSC with P3HT as HTL is attributed to the stronger band bending and higher interfacial defects. In accordance with the results, a large quasi‐Fermi level splitting and a minimal interfacial energy offsets may be considered when selecting material for high Voc PSCs. |
| first_indexed | 2024-03-12T21:51:02Z |
| format | Article |
| id | doaj.art-435ddbf7f8cd41c3adeede59aeb17cfc |
| institution | Directory Open Access Journal |
| issn | 2196-7350 |
| language | English |
| last_indexed | 2024-03-12T21:51:02Z |
| publishDate | 2023-01-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Materials Interfaces |
| spelling | doaj.art-435ddbf7f8cd41c3adeede59aeb17cfc2023-07-26T01:40:29ZengWiley-VCHAdvanced Materials Interfaces2196-73502023-01-01101n/an/a10.1002/admi.202201578Saturation of Open‐Circuit Voltage at Higher Light Intensity Caused by Interfacial Defects and Nonradiative Recombination Losses in Perovskite Solar CellsDavid Ompong0Kiran Sreedhar Ram1Daniel Dodzi Yao Setsoafia2Hooman Mehdizadeh Rad3Jai Singh4College of Engineering, IT and Environment Charles Darwin University Darwin Northern Territory 0909 AustraliaCollege of Engineering, IT and Environment Charles Darwin University Darwin Northern Territory 0909 AustraliaCollege of Engineering, IT and Environment Charles Darwin University Darwin Northern Territory 0909 AustraliaCollege of Engineering, IT and Environment Charles Darwin University Darwin Northern Territory 0909 AustraliaCollege of Engineering, IT and Environment Charles Darwin University Darwin Northern Territory 0909 AustraliaAbstract A new analytical expression that directly relates the open‐circuit voltage (Voc) in perovskite solar cells (PSCs) to the quasi‐Fermi level splitting (QFLS), interface energy offsets, and nonradiative recombination losses has been derived. It is found that the QFLS of the active layer plays a dominant role in enhancing Voc of PSCs. The newly derived Voc is applied to two PSCs with the hole transport layer (HTL) of poly[bis(4‐phenyl)(2,4,6‐trimethylphenyl)amine], and poly(3‐hexylthiophene‐2,5‐diyl) (P3HT) and found that the first PSC has a higher Voc, which agrees well with the experimental results. It is found that both PSCs exhibit saturation of Voc at the higher charge carrier generation rates and hence at higher light intensities. The lower Voc in PSC with P3HT as HTL is attributed to the stronger band bending and higher interfacial defects. In accordance with the results, a large quasi‐Fermi level splitting and a minimal interfacial energy offsets may be considered when selecting material for high Voc PSCs.https://doi.org/10.1002/admi.202201578interfacesnonradiative recombinationopen‐circuit voltage saturationperovskite solar cellsquasi‐Fermi level splitting |
| spellingShingle | David Ompong Kiran Sreedhar Ram Daniel Dodzi Yao Setsoafia Hooman Mehdizadeh Rad Jai Singh Saturation of Open‐Circuit Voltage at Higher Light Intensity Caused by Interfacial Defects and Nonradiative Recombination Losses in Perovskite Solar Cells Advanced Materials Interfaces interfaces nonradiative recombination open‐circuit voltage saturation perovskite solar cells quasi‐Fermi level splitting |
| title | Saturation of Open‐Circuit Voltage at Higher Light Intensity Caused by Interfacial Defects and Nonradiative Recombination Losses in Perovskite Solar Cells |
| title_full | Saturation of Open‐Circuit Voltage at Higher Light Intensity Caused by Interfacial Defects and Nonradiative Recombination Losses in Perovskite Solar Cells |
| title_fullStr | Saturation of Open‐Circuit Voltage at Higher Light Intensity Caused by Interfacial Defects and Nonradiative Recombination Losses in Perovskite Solar Cells |
| title_full_unstemmed | Saturation of Open‐Circuit Voltage at Higher Light Intensity Caused by Interfacial Defects and Nonradiative Recombination Losses in Perovskite Solar Cells |
| title_short | Saturation of Open‐Circuit Voltage at Higher Light Intensity Caused by Interfacial Defects and Nonradiative Recombination Losses in Perovskite Solar Cells |
| title_sort | saturation of open circuit voltage at higher light intensity caused by interfacial defects and nonradiative recombination losses in perovskite solar cells |
| topic | interfaces nonradiative recombination open‐circuit voltage saturation perovskite solar cells quasi‐Fermi level splitting |
| url | https://doi.org/10.1002/admi.202201578 |
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