Transport Properties of Methyl-Terminated Germanane Microcrystallites
Germanane is a two-dimensional material consisting of stacks of atomically thin germanium sheets. It’s easy and low-cost synthesis holds promise for the development of atomic-scale devices. However, to become an electronic-grade material, high-quality layered crystals with good chemical purity and s...
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MDPI AG
2022-03-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/12/7/1128 |
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| author | Davide Sciacca Maxime Berthe Bradley J. Ryan Nemanja Peric Dominique Deresmes Louis Biadala Christophe Boyaval Ahmed Addad Ophélie Lancry Raghda Makarem Sébastien Legendre Didier Hocrelle Matthew G. Panthani Geoffroy Prévot Emmanuel Lhuillier Pascale Diener Bruno Grandidier |
| author_facet | Davide Sciacca Maxime Berthe Bradley J. Ryan Nemanja Peric Dominique Deresmes Louis Biadala Christophe Boyaval Ahmed Addad Ophélie Lancry Raghda Makarem Sébastien Legendre Didier Hocrelle Matthew G. Panthani Geoffroy Prévot Emmanuel Lhuillier Pascale Diener Bruno Grandidier |
| author_sort | Davide Sciacca |
| collection | DOAJ |
| description | Germanane is a two-dimensional material consisting of stacks of atomically thin germanium sheets. It’s easy and low-cost synthesis holds promise for the development of atomic-scale devices. However, to become an electronic-grade material, high-quality layered crystals with good chemical purity and stability are needed. To this end, we studied the electrical transport of annealed methyl-terminated germanane microcrystallites in both high vacuum and ultrahigh vacuum. Scanning electron microscopy of crystallites revealed two types of behavior which arise from the difference in the crystallite chemistry. While some crystallites are hydrated and oxidized, preventing the formation of good electrical contact, the four-point resistance of oxygen-free crystallites was measured with multiple tips scanning tunneling microscopy, yielding a bulk transport with resistivity smaller than 1 Ω·cm. When normalized by the crystallite thickness, the resistance compares well with the resistance of hydrogen-passivated germanane flakes found in the literature. Along with the high purity of the crystallites, a thermal stability of the resistance at 280 °C makes methyl-terminated germanane suitable for complementary metal oxide semiconductor back-end-of-line processes. |
| first_indexed | 2024-03-09T11:34:24Z |
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| id | doaj.art-4384f0f70e514f8fb53837840bd3dde5 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-09T11:34:24Z |
| publishDate | 2022-03-01 |
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| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-4384f0f70e514f8fb53837840bd3dde52023-11-30T23:44:52ZengMDPI AGNanomaterials2079-49912022-03-01127112810.3390/nano12071128Transport Properties of Methyl-Terminated Germanane MicrocrystallitesDavide Sciacca0Maxime Berthe1Bradley J. Ryan2Nemanja Peric3Dominique Deresmes4Louis Biadala5Christophe Boyaval6Ahmed Addad7Ophélie Lancry8Raghda Makarem9Sébastien Legendre10Didier Hocrelle11Matthew G. Panthani12Geoffroy Prévot13Emmanuel Lhuillier14Pascale Diener15Bruno Grandidier16UMR 8520-IEMN, Université de Lille, CNRS, Centrale Lille, Université Polytechnique Hauts-de-France, Junia-ISEN, 59000 Lille, FranceUMR 8520-IEMN, Université de Lille, CNRS, Centrale Lille, Université Polytechnique Hauts-de-France, Junia-ISEN, 59000 Lille, FranceDepartment of Chemical and Biological Engineering, Iowa State University, Ames, IA 50011, USAUMR 8520-IEMN, Université de Lille, CNRS, Centrale Lille, Université Polytechnique Hauts-de-France, Junia-ISEN, 59000 Lille, FranceUMR 8520-IEMN, Université de Lille, CNRS, Centrale Lille, Université Polytechnique Hauts-de-France, Junia-ISEN, 59000 Lille, FranceUMR 8520-IEMN, Université de Lille, CNRS, Centrale Lille, Université Polytechnique Hauts-de-France, Junia-ISEN, 59000 Lille, FranceUMR 8520-IEMN, Université de Lille, CNRS, Centrale Lille, Université Polytechnique Hauts-de-France, Junia-ISEN, 59000 Lille, FranceUMR 8207–UMET-Unité Matériaux et Transformations, Université de Lille, CNRS, INRAE, Centrale Lille, 59000 Lille, FranceHORIBA FRANCE SAS, 91120 Palaiseau, FranceHORIBA FRANCE SAS, 91120 Palaiseau, FranceHORIBA FRANCE SAS, 91120 Palaiseau, FranceHORIBA FRANCE SAS, 91120 Palaiseau, FranceDepartment of Chemical and Biological Engineering, Iowa State University, Ames, IA 50011, USAInstitut des NanoSciences de Paris, CNRS, Université de Sorbonne, 75005 Paris, FranceInstitut des NanoSciences de Paris, CNRS, Université de Sorbonne, 75005 Paris, FranceUMR 8520-IEMN, Université de Lille, CNRS, Centrale Lille, Université Polytechnique Hauts-de-France, Junia-ISEN, 59000 Lille, FranceUMR 8520-IEMN, Université de Lille, CNRS, Centrale Lille, Université Polytechnique Hauts-de-France, Junia-ISEN, 59000 Lille, FranceGermanane is a two-dimensional material consisting of stacks of atomically thin germanium sheets. It’s easy and low-cost synthesis holds promise for the development of atomic-scale devices. However, to become an electronic-grade material, high-quality layered crystals with good chemical purity and stability are needed. To this end, we studied the electrical transport of annealed methyl-terminated germanane microcrystallites in both high vacuum and ultrahigh vacuum. Scanning electron microscopy of crystallites revealed two types of behavior which arise from the difference in the crystallite chemistry. While some crystallites are hydrated and oxidized, preventing the formation of good electrical contact, the four-point resistance of oxygen-free crystallites was measured with multiple tips scanning tunneling microscopy, yielding a bulk transport with resistivity smaller than 1 Ω·cm. When normalized by the crystallite thickness, the resistance compares well with the resistance of hydrogen-passivated germanane flakes found in the literature. Along with the high purity of the crystallites, a thermal stability of the resistance at 280 °C makes methyl-terminated germanane suitable for complementary metal oxide semiconductor back-end-of-line processes.https://www.mdpi.com/2079-4991/12/7/1128germananemethylationhydrationresistivitythermal robustness |
| spellingShingle | Davide Sciacca Maxime Berthe Bradley J. Ryan Nemanja Peric Dominique Deresmes Louis Biadala Christophe Boyaval Ahmed Addad Ophélie Lancry Raghda Makarem Sébastien Legendre Didier Hocrelle Matthew G. Panthani Geoffroy Prévot Emmanuel Lhuillier Pascale Diener Bruno Grandidier Transport Properties of Methyl-Terminated Germanane Microcrystallites Nanomaterials germanane methylation hydration resistivity thermal robustness |
| title | Transport Properties of Methyl-Terminated Germanane Microcrystallites |
| title_full | Transport Properties of Methyl-Terminated Germanane Microcrystallites |
| title_fullStr | Transport Properties of Methyl-Terminated Germanane Microcrystallites |
| title_full_unstemmed | Transport Properties of Methyl-Terminated Germanane Microcrystallites |
| title_short | Transport Properties of Methyl-Terminated Germanane Microcrystallites |
| title_sort | transport properties of methyl terminated germanane microcrystallites |
| topic | germanane methylation hydration resistivity thermal robustness |
| url | https://www.mdpi.com/2079-4991/12/7/1128 |
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