DIELECTRICAL CHARACTERISTICS OF CAPACITOR STRUCTURES ON THE BASIS OF SOL-GEL DERIVED STRONTIUM TITANATE FILMS
The thin film capacitors were formed on silicon. The capacitor is based on the strontium titanate multi-layer which was fabricated using the sol-gel method after heat treatment at the temperature 750 or 800 °C. The lower and upper electrodes were made from platinum and nickel accordingly. The averag...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | Russian |
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Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-06-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Subjects: | |
| Online Access: | https://doklady.bsuir.by/jour/article/view/371 |
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| author | A. H. Sohrabi N. V. Gaponenko M. V. Rudenko S. M. Zavadski D. A. Golosov A. F. Guk V. V. Kolos A. N. Pyatlitski A. S. Turtsevich |
| author_facet | A. H. Sohrabi N. V. Gaponenko M. V. Rudenko S. M. Zavadski D. A. Golosov A. F. Guk V. V. Kolos A. N. Pyatlitski A. S. Turtsevich |
| author_sort | A. H. Sohrabi |
| collection | DOAJ |
| description | The thin film capacitors were formed on silicon. The capacitor is based on the strontium titanate multi-layer which was fabricated using the sol-gel method after heat treatment at the temperature 750 or 800 °C. The lower and upper electrodes were made from platinum and nickel accordingly. The average values of the dielectric permittivity, ε, and the loss factor, tg δ, were found between 150-190 and 0,06-0,1 respectively. The standard deviation values of the mentioned characteristics were calculated. |
| first_indexed | 2024-04-10T03:15:15Z |
| format | Article |
| id | doaj.art-438ca932fb7c4af780ecf0532c6ec3ba |
| institution | Directory Open Access Journal |
| issn | 1729-7648 |
| language | Russian |
| last_indexed | 2025-02-18T02:00:52Z |
| publishDate | 2019-06-01 |
| publisher | Educational institution «Belarusian State University of Informatics and Radioelectronics» |
| record_format | Article |
| series | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| spelling | doaj.art-438ca932fb7c4af780ecf0532c6ec3ba2024-11-26T11:47:31ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482019-06-01072831370DIELECTRICAL CHARACTERISTICS OF CAPACITOR STRUCTURES ON THE BASIS OF SOL-GEL DERIVED STRONTIUM TITANATE FILMSA. H. Sohrabi0N. V. Gaponenko1M. V. Rudenko2S. M. Zavadski3D. A. Golosov4A. F. Guk5V. V. Kolos6A. N. Pyatlitski7A. S. Turtsevich8Белорусский государственный университет информатики и радиоэлектроникиБелорусский государственный университет информатики и радиоэлектроникиБелорусский государственный университет информатики и радиоэлектроникиБелорусский государственный университет информатики и радиоэлектроникиБелорусский государственный университет информатики и радиоэлектроникиБелорусский государственный университет информатики и радиоэлектроникиОАО «Интеграл»ОАО «Интеграл»ОАО «Интеграл»The thin film capacitors were formed on silicon. The capacitor is based on the strontium titanate multi-layer which was fabricated using the sol-gel method after heat treatment at the temperature 750 or 800 °C. The lower and upper electrodes were made from platinum and nickel accordingly. The average values of the dielectric permittivity, ε, and the loss factor, tg δ, were found between 150-190 and 0,06-0,1 respectively. The standard deviation values of the mentioned characteristics were calculated.https://doklady.bsuir.by/jour/article/view/371золь-гельтитанат стронцияконденсатор |
| spellingShingle | A. H. Sohrabi N. V. Gaponenko M. V. Rudenko S. M. Zavadski D. A. Golosov A. F. Guk V. V. Kolos A. N. Pyatlitski A. S. Turtsevich DIELECTRICAL CHARACTERISTICS OF CAPACITOR STRUCTURES ON THE BASIS OF SOL-GEL DERIVED STRONTIUM TITANATE FILMS Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki золь-гель титанат стронция конденсатор |
| title | DIELECTRICAL CHARACTERISTICS OF CAPACITOR STRUCTURES ON THE BASIS OF SOL-GEL DERIVED STRONTIUM TITANATE FILMS |
| title_full | DIELECTRICAL CHARACTERISTICS OF CAPACITOR STRUCTURES ON THE BASIS OF SOL-GEL DERIVED STRONTIUM TITANATE FILMS |
| title_fullStr | DIELECTRICAL CHARACTERISTICS OF CAPACITOR STRUCTURES ON THE BASIS OF SOL-GEL DERIVED STRONTIUM TITANATE FILMS |
| title_full_unstemmed | DIELECTRICAL CHARACTERISTICS OF CAPACITOR STRUCTURES ON THE BASIS OF SOL-GEL DERIVED STRONTIUM TITANATE FILMS |
| title_short | DIELECTRICAL CHARACTERISTICS OF CAPACITOR STRUCTURES ON THE BASIS OF SOL-GEL DERIVED STRONTIUM TITANATE FILMS |
| title_sort | dielectrical characteristics of capacitor structures on the basis of sol gel derived strontium titanate films |
| topic | золь-гель титанат стронция конденсатор |
| url | https://doklady.bsuir.by/jour/article/view/371 |
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