Study of interface reaction in a B4C/Cr mirror at elevated temperature using soft X-ray reflectivity
Boron carbide is a prominent material for high-brilliance synchrotron optics as it remains stable up to very high temperatures. The present study shows a significant change taking place at 550°C in the buried interface region formed between the Cr adhesive layer and the native oxide layer present on...
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| Format: | Article |
| Language: | English |
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International Union of Crystallography
2022-07-01
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| Series: | Journal of Synchrotron Radiation |
| Subjects: | |
| Online Access: | http://scripts.iucr.org/cgi-bin/paper?S1600577522004738 |
| _version_ | 1818116189785686016 |
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| author | Mohammed H. Modi Shruti Gupta Praveen K. Yadav Rajkumar Gupta Aniruddha Bose Chandrachur Mukherjee Philippe Jonnard Mourad Idir |
| author_facet | Mohammed H. Modi Shruti Gupta Praveen K. Yadav Rajkumar Gupta Aniruddha Bose Chandrachur Mukherjee Philippe Jonnard Mourad Idir |
| author_sort | Mohammed H. Modi |
| collection | DOAJ |
| description | Boron carbide is a prominent material for high-brilliance synchrotron optics as it remains stable up to very high temperatures. The present study shows a significant change taking place at 550°C in the buried interface region formed between the Cr adhesive layer and the native oxide layer present on the silicon substrate. An in situ annealing study is carried out at the Indus-1 Reflectivity beamline from room temperature to 550°C (100°C steps). The studied sample is a mirror-like boron carbide thin film of 400 Å thickness deposited with an adhesive layer of 20 Å Cr on a silicon substrate. The corresponding changes in the film structure are recorded using angle-dependent soft X-ray reflectivity measurements carried out in the region of the boron K-edge after each annealing temperature. Analyses performed using the Parratt recursive formalism reveal that the top boron carbide layer remains intact but interface reactions take place in the buried Cr–SiO2 region. After 300°C the Cr layer diffuses towards the substrate. At higher temperatures of 500°C and 550°C the Cr reacts with the native oxide layer and tends to form a low-density compound of chromium oxysilicide (CrSiOx). Depth profiling of Si and Cr distributions obtained from secondary ion mass spectroscopy measurements corroborate the layer model obtained from the soft X-ray reflectivity analyses. Details of the interface reaction taking place near the substrate region of boron carbide/Cr sample are discussed. |
| first_indexed | 2024-12-11T04:18:34Z |
| format | Article |
| id | doaj.art-439cea6db34746d5868804eb25fc6c08 |
| institution | Directory Open Access Journal |
| issn | 1600-5775 |
| language | English |
| last_indexed | 2024-12-11T04:18:34Z |
| publishDate | 2022-07-01 |
| publisher | International Union of Crystallography |
| record_format | Article |
| series | Journal of Synchrotron Radiation |
| spelling | doaj.art-439cea6db34746d5868804eb25fc6c082022-12-22T01:21:10ZengInternational Union of CrystallographyJournal of Synchrotron Radiation1600-57752022-07-0129497898410.1107/S1600577522004738ve5157Study of interface reaction in a B4C/Cr mirror at elevated temperature using soft X-ray reflectivityMohammed H. Modi0Shruti Gupta1Praveen K. Yadav2Rajkumar Gupta3Aniruddha Bose4Chandrachur Mukherjee5Philippe Jonnard6Mourad Idir7Soft X-ray Applications Laboratory, Raja Ramanna Centre for Advanced Technology, Indore 452013, IndiaSoft X-ray Applications Laboratory, Raja Ramanna Centre for Advanced Technology, Indore 452013, IndiaSoft X-ray Applications Laboratory, Raja Ramanna Centre for Advanced Technology, Indore 452013, IndiaSoft X-ray Applications Laboratory, Raja Ramanna Centre for Advanced Technology, Indore 452013, IndiaSuperconducting Proton Linac Section, Raja Ramanna Centre for Advanced Technology, Indore 452013, IndiaOptical Coating Laboratory, Raja Ramanna Centre for Advanced Technology, Indore 452013, IndiaSorbonne Universite, Faculte des Sciences et Ingénierie, UMR CNRS, Laboratoire de Chimie Physique-Matiere et Rayonnement, 4 Place Jussieu, F-75252 Paris Cedex 05, FranceNational Synchrotron Light Source II (NSLS-II), Brookhaven National Laboratory, PO Box 5000, Upton, NY 11973, USABoron carbide is a prominent material for high-brilliance synchrotron optics as it remains stable up to very high temperatures. The present study shows a significant change taking place at 550°C in the buried interface region formed between the Cr adhesive layer and the native oxide layer present on the silicon substrate. An in situ annealing study is carried out at the Indus-1 Reflectivity beamline from room temperature to 550°C (100°C steps). The studied sample is a mirror-like boron carbide thin film of 400 Å thickness deposited with an adhesive layer of 20 Å Cr on a silicon substrate. The corresponding changes in the film structure are recorded using angle-dependent soft X-ray reflectivity measurements carried out in the region of the boron K-edge after each annealing temperature. Analyses performed using the Parratt recursive formalism reveal that the top boron carbide layer remains intact but interface reactions take place in the buried Cr–SiO2 region. After 300°C the Cr layer diffuses towards the substrate. At higher temperatures of 500°C and 550°C the Cr reacts with the native oxide layer and tends to form a low-density compound of chromium oxysilicide (CrSiOx). Depth profiling of Si and Cr distributions obtained from secondary ion mass spectroscopy measurements corroborate the layer model obtained from the soft X-ray reflectivity analyses. Details of the interface reaction taking place near the substrate region of boron carbide/Cr sample are discussed.http://scripts.iucr.org/cgi-bin/paper?S1600577522004738boron carbidex-ray mirrorssynchrotron radiationsoft x-ray reflectivityx-ray optics |
| spellingShingle | Mohammed H. Modi Shruti Gupta Praveen K. Yadav Rajkumar Gupta Aniruddha Bose Chandrachur Mukherjee Philippe Jonnard Mourad Idir Study of interface reaction in a B4C/Cr mirror at elevated temperature using soft X-ray reflectivity Journal of Synchrotron Radiation boron carbide x-ray mirrors synchrotron radiation soft x-ray reflectivity x-ray optics |
| title | Study of interface reaction in a B4C/Cr mirror at elevated temperature using soft X-ray reflectivity |
| title_full | Study of interface reaction in a B4C/Cr mirror at elevated temperature using soft X-ray reflectivity |
| title_fullStr | Study of interface reaction in a B4C/Cr mirror at elevated temperature using soft X-ray reflectivity |
| title_full_unstemmed | Study of interface reaction in a B4C/Cr mirror at elevated temperature using soft X-ray reflectivity |
| title_short | Study of interface reaction in a B4C/Cr mirror at elevated temperature using soft X-ray reflectivity |
| title_sort | study of interface reaction in a b4c cr mirror at elevated temperature using soft x ray reflectivity |
| topic | boron carbide x-ray mirrors synchrotron radiation soft x-ray reflectivity x-ray optics |
| url | http://scripts.iucr.org/cgi-bin/paper?S1600577522004738 |
| work_keys_str_mv | AT mohammedhmodi studyofinterfacereactioninab4ccrmirroratelevatedtemperatureusingsoftxrayreflectivity AT shrutigupta studyofinterfacereactioninab4ccrmirroratelevatedtemperatureusingsoftxrayreflectivity AT praveenkyadav studyofinterfacereactioninab4ccrmirroratelevatedtemperatureusingsoftxrayreflectivity AT rajkumargupta studyofinterfacereactioninab4ccrmirroratelevatedtemperatureusingsoftxrayreflectivity AT aniruddhabose studyofinterfacereactioninab4ccrmirroratelevatedtemperatureusingsoftxrayreflectivity AT chandrachurmukherjee studyofinterfacereactioninab4ccrmirroratelevatedtemperatureusingsoftxrayreflectivity AT philippejonnard studyofinterfacereactioninab4ccrmirroratelevatedtemperatureusingsoftxrayreflectivity AT mouradidir studyofinterfacereactioninab4ccrmirroratelevatedtemperatureusingsoftxrayreflectivity |