Photonic Platforms Using In‐Plane Optical Anisotropy of Tin (II) Selenide and Black Phosphorus
Among layered and 2D semiconductors, there are many with substantial optical anisotropy within individual layers, including group‐IV monochalcogenides MX (M = Ge or Sn and X = S or Se) and black phosphorous (bP). Recent work has suggested that the in‐plane crystal orientation in such materials can b...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2021-12-01
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| Series: | Advanced Photonics Research |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/adpr.202100176 |
| _version_ | 1818406117583093760 |
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| author | Seong Soon Jo Changming Wu Linghan Zhu Li Yang Mo Li Rafael Jaramillo |
| author_facet | Seong Soon Jo Changming Wu Linghan Zhu Li Yang Mo Li Rafael Jaramillo |
| author_sort | Seong Soon Jo |
| collection | DOAJ |
| description | Among layered and 2D semiconductors, there are many with substantial optical anisotropy within individual layers, including group‐IV monochalcogenides MX (M = Ge or Sn and X = S or Se) and black phosphorous (bP). Recent work has suggested that the in‐plane crystal orientation in such materials can be switched (e.g., rotated through 90°) through an ultrafast, displacive (i.e., nondiffusive), nonthermal, and lower‐power mechanism by strong electric fields, due to in‐plane dielectric anisotropy. In theory, this represents a new mechanism for light‐controlling‐light in photonic integrated circuits (PICs). Herein, numerical device modeling is used to study device concepts based on switching the crystal orientation of SnSe and bP in PICs. Ring resonators and 1 × 2 switches with resonant conditions that change with the in‐plane crystal orientations SnSe and bP are simulated. The results are broadly applicable to 2D materials with ferroelectric and ferroelastic crystal structures including SnO, GeS, and GeSe. |
| first_indexed | 2024-12-14T09:06:51Z |
| format | Article |
| id | doaj.art-43c4806d0d1742188f38a35df90f4cd8 |
| institution | Directory Open Access Journal |
| issn | 2699-9293 |
| language | English |
| last_indexed | 2024-12-14T09:06:51Z |
| publishDate | 2021-12-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Photonics Research |
| spelling | doaj.art-43c4806d0d1742188f38a35df90f4cd82022-12-21T23:08:41ZengWiley-VCHAdvanced Photonics Research2699-92932021-12-01212n/an/a10.1002/adpr.202100176Photonic Platforms Using In‐Plane Optical Anisotropy of Tin (II) Selenide and Black PhosphorusSeong Soon Jo0Changming Wu1Linghan Zhu2Li Yang3Mo Li4Rafael Jaramillo5Department of Materials Science and Engineering Massachusetts Institute of Technology Cambridge MA 02139 USADepartment of Electrical and Computer Engineering University of Washington Seattle WA 98195 USADepartment of Physics Washington University in St. Louis St. Louis MO 63130 USADepartment of Physics Washington University in St. Louis St. Louis MO 63130 USADepartment of Electrical and Computer Engineering University of Washington Seattle WA 98195 USADepartment of Materials Science and Engineering Massachusetts Institute of Technology Cambridge MA 02139 USAAmong layered and 2D semiconductors, there are many with substantial optical anisotropy within individual layers, including group‐IV monochalcogenides MX (M = Ge or Sn and X = S or Se) and black phosphorous (bP). Recent work has suggested that the in‐plane crystal orientation in such materials can be switched (e.g., rotated through 90°) through an ultrafast, displacive (i.e., nondiffusive), nonthermal, and lower‐power mechanism by strong electric fields, due to in‐plane dielectric anisotropy. In theory, this represents a new mechanism for light‐controlling‐light in photonic integrated circuits (PICs). Herein, numerical device modeling is used to study device concepts based on switching the crystal orientation of SnSe and bP in PICs. Ring resonators and 1 × 2 switches with resonant conditions that change with the in‐plane crystal orientations SnSe and bP are simulated. The results are broadly applicable to 2D materials with ferroelectric and ferroelastic crystal structures including SnO, GeS, and GeSe.https://doi.org/10.1002/adpr.202100176black phosphorousintegrated photonic deviceslayered materialstin selenidetriaxial materials |
| spellingShingle | Seong Soon Jo Changming Wu Linghan Zhu Li Yang Mo Li Rafael Jaramillo Photonic Platforms Using In‐Plane Optical Anisotropy of Tin (II) Selenide and Black Phosphorus Advanced Photonics Research black phosphorous integrated photonic devices layered materials tin selenide triaxial materials |
| title | Photonic Platforms Using In‐Plane Optical Anisotropy of Tin (II) Selenide and Black Phosphorus |
| title_full | Photonic Platforms Using In‐Plane Optical Anisotropy of Tin (II) Selenide and Black Phosphorus |
| title_fullStr | Photonic Platforms Using In‐Plane Optical Anisotropy of Tin (II) Selenide and Black Phosphorus |
| title_full_unstemmed | Photonic Platforms Using In‐Plane Optical Anisotropy of Tin (II) Selenide and Black Phosphorus |
| title_short | Photonic Platforms Using In‐Plane Optical Anisotropy of Tin (II) Selenide and Black Phosphorus |
| title_sort | photonic platforms using in plane optical anisotropy of tin ii selenide and black phosphorus |
| topic | black phosphorous integrated photonic devices layered materials tin selenide triaxial materials |
| url | https://doi.org/10.1002/adpr.202100176 |
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