Effects of Al doping concentration and top electrode on the ferroelectricity of Al-doped HfO2 thin films
Al-doped HfO2 (HAO) is regarded as one of the potential HfO2 ferroelectric materials owing to its compatibility with the front end of the line process in integration circuits. In this work, atomic layer deposited (ALD) HAO thin films with different Al-doping concentrations and the corresponding devi...
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2024-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0175930 |
| _version_ | 1797332034946859008 |
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| author | Li Feng Yu-Chun Li Teng Huang Hong-Liang Lu David Wei Zhang |
| author_facet | Li Feng Yu-Chun Li Teng Huang Hong-Liang Lu David Wei Zhang |
| author_sort | Li Feng |
| collection | DOAJ |
| description | Al-doped HfO2 (HAO) is regarded as one of the potential HfO2 ferroelectric materials owing to its compatibility with the front end of the line process in integration circuits. In this work, atomic layer deposited (ALD) HAO thin films with different Al-doping concentrations and the corresponding devices with Ti or W top electrodes have been explored. It is found that the HAO film properties and corresponding ferroelectric device performances depend greatly on the doping concentration. In the concentration range of 3.0%–5.0%, 4.5% is the most proper doping concentration to induce the ferroelectricity of the thin film. It is revealed by x-ray diffraction and photoelectron spectroscopy that the oxygen vacancies can be modulated by doping, thereby contributing to the formation of the ferroelectric orthorhombic phase. A high remnant polarization (2Pr) of 36.8 ± 0.7 μC/cm2 under 5 mV/cm sweeping is observed through electrical measurement in the device with a 4.5% HAO and W top electrode. In addition, it was found that the choice of W or Ti top electrodes would affect the leakage and breakdown characteristics of the device. This work reveals the mechanism of Al doping and electrode modulation of HfO2 device performance and promotes the development of HAO ferroelectric thin film devices. |
| first_indexed | 2024-03-08T07:43:51Z |
| format | Article |
| id | doaj.art-43d8b473bd814585af5f829c9d2b6a41 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-03-08T07:43:51Z |
| publishDate | 2024-01-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-43d8b473bd814585af5f829c9d2b6a412024-02-02T16:46:06ZengAIP Publishing LLCAIP Advances2158-32262024-01-01141015105015105-910.1063/5.0175930Effects of Al doping concentration and top electrode on the ferroelectricity of Al-doped HfO2 thin filmsLi Feng0Yu-Chun Li1Teng Huang2Hong-Liang Lu3David Wei Zhang4State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, ChinaState Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, ChinaState Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, ChinaState Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, ChinaState Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, ChinaAl-doped HfO2 (HAO) is regarded as one of the potential HfO2 ferroelectric materials owing to its compatibility with the front end of the line process in integration circuits. In this work, atomic layer deposited (ALD) HAO thin films with different Al-doping concentrations and the corresponding devices with Ti or W top electrodes have been explored. It is found that the HAO film properties and corresponding ferroelectric device performances depend greatly on the doping concentration. In the concentration range of 3.0%–5.0%, 4.5% is the most proper doping concentration to induce the ferroelectricity of the thin film. It is revealed by x-ray diffraction and photoelectron spectroscopy that the oxygen vacancies can be modulated by doping, thereby contributing to the formation of the ferroelectric orthorhombic phase. A high remnant polarization (2Pr) of 36.8 ± 0.7 μC/cm2 under 5 mV/cm sweeping is observed through electrical measurement in the device with a 4.5% HAO and W top electrode. In addition, it was found that the choice of W or Ti top electrodes would affect the leakage and breakdown characteristics of the device. This work reveals the mechanism of Al doping and electrode modulation of HfO2 device performance and promotes the development of HAO ferroelectric thin film devices.http://dx.doi.org/10.1063/5.0175930 |
| spellingShingle | Li Feng Yu-Chun Li Teng Huang Hong-Liang Lu David Wei Zhang Effects of Al doping concentration and top electrode on the ferroelectricity of Al-doped HfO2 thin films AIP Advances |
| title | Effects of Al doping concentration and top electrode on the ferroelectricity of Al-doped HfO2 thin films |
| title_full | Effects of Al doping concentration and top electrode on the ferroelectricity of Al-doped HfO2 thin films |
| title_fullStr | Effects of Al doping concentration and top electrode on the ferroelectricity of Al-doped HfO2 thin films |
| title_full_unstemmed | Effects of Al doping concentration and top electrode on the ferroelectricity of Al-doped HfO2 thin films |
| title_short | Effects of Al doping concentration and top electrode on the ferroelectricity of Al-doped HfO2 thin films |
| title_sort | effects of al doping concentration and top electrode on the ferroelectricity of al doped hfo2 thin films |
| url | http://dx.doi.org/10.1063/5.0175930 |
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