Effects of Al doping concentration and top electrode on the ferroelectricity of Al-doped HfO2 thin films
Al-doped HfO2 (HAO) is regarded as one of the potential HfO2 ferroelectric materials owing to its compatibility with the front end of the line process in integration circuits. In this work, atomic layer deposited (ALD) HAO thin films with different Al-doping concentrations and the corresponding devi...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2024-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0175930 |