Effects of Al doping concentration and top electrode on the ferroelectricity of Al-doped HfO2 thin films

Effects of Al doping concentration and top electrode on the ferroelectricity of Al-doped HfO2 thin films

Al-doped HfO2 (HAO) is regarded as one of the potential HfO2 ferroelectric materials owing to its compatibility with the front end of the line process in integration circuits. In this work, atomic layer deposited (ALD) HAO thin films with different Al-doping concentrations and the corresponding devi...

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Bibliographic Details
Main Authors: Li Feng, Yu-Chun Li, Teng Huang, Hong-Liang Lu, David Wei Zhang
Format: Article
Language:English
Published: AIP Publishing LLC 2024-01-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0175930

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