Enhanced magnetic moment with cobalt dopant in SnS2 semiconductor

We report the strong ferromagnetic order in van der Waals (vdW) layered SnS2 induced by cobalt substitution. The single-crystal Co-doped SnS2 grown by a self-flux method reveals a relatively high Curie temperature (TC) of ∼131 K with an in-plane magnetic easy axis and a large saturation magnetizatio...

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Main Authors: Houcine Bouzid, Steven Rodan, Kirandeep Singh, Youngjo Jin, Jinbao Jiang, Duhee Yoon, Hyun Yong Song, Young Hee Lee
Format: Article
Language:English
Published: AIP Publishing LLC 2021-05-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/5.0048885
_version_ 1818863645555163136
author Houcine Bouzid
Steven Rodan
Kirandeep Singh
Youngjo Jin
Jinbao Jiang
Duhee Yoon
Hyun Yong Song
Young Hee Lee
author_facet Houcine Bouzid
Steven Rodan
Kirandeep Singh
Youngjo Jin
Jinbao Jiang
Duhee Yoon
Hyun Yong Song
Young Hee Lee
author_sort Houcine Bouzid
collection DOAJ
description We report the strong ferromagnetic order in van der Waals (vdW) layered SnS2 induced by cobalt substitution. The single-crystal Co-doped SnS2 grown by a self-flux method reveals a relatively high Curie temperature (TC) of ∼131 K with an in-plane magnetic easy axis and a large saturation magnetization of ∼0.65 emu g−1 for the 2 at. % Co concentration, which is two orders of magnitude larger than the previously reported value for transition-metal-doped SnS2. The average magnetic moment per Co atom, as high as 1.08 µB, is consistent with the calculated value based on density functional theory, i.e., 1 µB, indicating a negligible antiferromagnetic coupling between Co atoms. Magnetoresistance shows a change in sign from positive to negative, which further confirms the ferromagnetic order in Co-doped SnS2. Our s-p hybridized vdW layered SnS2 serves as a host semiconductor material to search for a suitable magnetic dopant with a high magnetic moment and room temperature TC for next-generation spintronics.
first_indexed 2024-12-19T10:19:03Z
format Article
id doaj.art-43e37d97f097426e89afc04d926c2589
institution Directory Open Access Journal
issn 2166-532X
language English
last_indexed 2024-12-19T10:19:03Z
publishDate 2021-05-01
publisher AIP Publishing LLC
record_format Article
series APL Materials
spelling doaj.art-43e37d97f097426e89afc04d926c25892022-12-21T20:26:08ZengAIP Publishing LLCAPL Materials2166-532X2021-05-0195051106051106-810.1063/5.0048885Enhanced magnetic moment with cobalt dopant in SnS2 semiconductorHoucine Bouzid0Steven Rodan1Kirandeep Singh2Youngjo Jin3Jinbao Jiang4Duhee Yoon5Hyun Yong Song6Young Hee Lee7Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of KoreaCenter for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of KoreaCenter for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of KoreaCenter for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of KoreaCenter for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of KoreaCenter for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of KoreaCenter for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of KoreaCenter for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of KoreaWe report the strong ferromagnetic order in van der Waals (vdW) layered SnS2 induced by cobalt substitution. The single-crystal Co-doped SnS2 grown by a self-flux method reveals a relatively high Curie temperature (TC) of ∼131 K with an in-plane magnetic easy axis and a large saturation magnetization of ∼0.65 emu g−1 for the 2 at. % Co concentration, which is two orders of magnitude larger than the previously reported value for transition-metal-doped SnS2. The average magnetic moment per Co atom, as high as 1.08 µB, is consistent with the calculated value based on density functional theory, i.e., 1 µB, indicating a negligible antiferromagnetic coupling between Co atoms. Magnetoresistance shows a change in sign from positive to negative, which further confirms the ferromagnetic order in Co-doped SnS2. Our s-p hybridized vdW layered SnS2 serves as a host semiconductor material to search for a suitable magnetic dopant with a high magnetic moment and room temperature TC for next-generation spintronics.http://dx.doi.org/10.1063/5.0048885
spellingShingle Houcine Bouzid
Steven Rodan
Kirandeep Singh
Youngjo Jin
Jinbao Jiang
Duhee Yoon
Hyun Yong Song
Young Hee Lee
Enhanced magnetic moment with cobalt dopant in SnS2 semiconductor
APL Materials
title Enhanced magnetic moment with cobalt dopant in SnS2 semiconductor
title_full Enhanced magnetic moment with cobalt dopant in SnS2 semiconductor
title_fullStr Enhanced magnetic moment with cobalt dopant in SnS2 semiconductor
title_full_unstemmed Enhanced magnetic moment with cobalt dopant in SnS2 semiconductor
title_short Enhanced magnetic moment with cobalt dopant in SnS2 semiconductor
title_sort enhanced magnetic moment with cobalt dopant in sns2 semiconductor
url http://dx.doi.org/10.1063/5.0048885
work_keys_str_mv AT houcinebouzid enhancedmagneticmomentwithcobaltdopantinsns2semiconductor
AT stevenrodan enhancedmagneticmomentwithcobaltdopantinsns2semiconductor
AT kirandeepsingh enhancedmagneticmomentwithcobaltdopantinsns2semiconductor
AT youngjojin enhancedmagneticmomentwithcobaltdopantinsns2semiconductor
AT jinbaojiang enhancedmagneticmomentwithcobaltdopantinsns2semiconductor
AT duheeyoon enhancedmagneticmomentwithcobaltdopantinsns2semiconductor
AT hyunyongsong enhancedmagneticmomentwithcobaltdopantinsns2semiconductor
AT youngheelee enhancedmagneticmomentwithcobaltdopantinsns2semiconductor