Metal–insulator transitions in dimensionality controlled LaxSr1−xVO3 films
Carrier doping into two dimensional (2D) Mott insulators is one of the prospective strategies for exploring exotic quantum phenomena. Although ultra-thin oxide films are one such target, it is vitally important to fabricate well-defined and clean samples to extract intrinsic properties. In this stud...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2022-11-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0122864 |
| _version_ | 1797947387356905472 |
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| author | K. S. Takahashi Y. Tokura M. Kawasaki |
| author_facet | K. S. Takahashi Y. Tokura M. Kawasaki |
| author_sort | K. S. Takahashi |
| collection | DOAJ |
| description | Carrier doping into two dimensional (2D) Mott insulators is one of the prospective strategies for exploring exotic quantum phenomena. Although ultra-thin oxide films are one such target, it is vitally important to fabricate well-defined and clean samples to extract intrinsic properties. In this study, we start from establishing the growth of clean SrVO3 films with a low residual resistivity (∼4 × 10−7 Ω cm) and a high mobility (∼103 cm2/V s). By confining them with SrTiO3 barrier layers, the Mott insulator state appears at the thickness below 3 unit cells (u.c.). By the electron doping in the form of LaxSr1−xVO3 for such two dimensional systems (2 and 3 u.c), metallic-like phases appear in a narrow x region around x = 0.17, indicating a collapse of the Mott insulator state. This study demonstrates that artificial 2D systems of clean oxides are a promising playground for exploring novel Mott physics in confined systems. |
| first_indexed | 2024-04-10T21:26:56Z |
| format | Article |
| id | doaj.art-4447cce96cc84ca8b3d46cef80400456 |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-04-10T21:26:56Z |
| publishDate | 2022-11-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-4447cce96cc84ca8b3d46cef804004562023-01-19T16:28:28ZengAIP Publishing LLCAPL Materials2166-532X2022-11-011011111114111114-510.1063/5.0122864Metal–insulator transitions in dimensionality controlled LaxSr1−xVO3 filmsK. S. Takahashi0Y. Tokura1M. Kawasaki2RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, JapanRIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, JapanRIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, JapanCarrier doping into two dimensional (2D) Mott insulators is one of the prospective strategies for exploring exotic quantum phenomena. Although ultra-thin oxide films are one such target, it is vitally important to fabricate well-defined and clean samples to extract intrinsic properties. In this study, we start from establishing the growth of clean SrVO3 films with a low residual resistivity (∼4 × 10−7 Ω cm) and a high mobility (∼103 cm2/V s). By confining them with SrTiO3 barrier layers, the Mott insulator state appears at the thickness below 3 unit cells (u.c.). By the electron doping in the form of LaxSr1−xVO3 for such two dimensional systems (2 and 3 u.c), metallic-like phases appear in a narrow x region around x = 0.17, indicating a collapse of the Mott insulator state. This study demonstrates that artificial 2D systems of clean oxides are a promising playground for exploring novel Mott physics in confined systems.http://dx.doi.org/10.1063/5.0122864 |
| spellingShingle | K. S. Takahashi Y. Tokura M. Kawasaki Metal–insulator transitions in dimensionality controlled LaxSr1−xVO3 films APL Materials |
| title | Metal–insulator transitions in dimensionality controlled LaxSr1−xVO3 films |
| title_full | Metal–insulator transitions in dimensionality controlled LaxSr1−xVO3 films |
| title_fullStr | Metal–insulator transitions in dimensionality controlled LaxSr1−xVO3 films |
| title_full_unstemmed | Metal–insulator transitions in dimensionality controlled LaxSr1−xVO3 films |
| title_short | Metal–insulator transitions in dimensionality controlled LaxSr1−xVO3 films |
| title_sort | metal insulator transitions in dimensionality controlled laxsr1 xvo3 films |
| url | http://dx.doi.org/10.1063/5.0122864 |
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