Skyrmion Phase in MnSi Thin Films Grown on Sapphire by a Conventional Sputtering

Abstract Topologically protected chiral skyrmions are an intriguing spin texture that has attracted much attention because of fundamental research and future spintronic applications. MnSi with a non-centrosymmetric structure is a well-known material hosting a skyrmion phase. To date, the preparation...

Full description

Bibliographic Details
Main Authors: Won-Young Choi, Hyun-Woo Bang, Seung-Hyun Chun, Sunghun Lee, Myung-Hwa Jung
Format: Article
Language:English
Published: SpringerOpen 2021-01-01
Series:Nanoscale Research Letters
Subjects:
Online Access:https://doi.org/10.1186/s11671-020-03462-2
_version_ 1797766021131534336
author Won-Young Choi
Hyun-Woo Bang
Seung-Hyun Chun
Sunghun Lee
Myung-Hwa Jung
author_facet Won-Young Choi
Hyun-Woo Bang
Seung-Hyun Chun
Sunghun Lee
Myung-Hwa Jung
author_sort Won-Young Choi
collection DOAJ
description Abstract Topologically protected chiral skyrmions are an intriguing spin texture that has attracted much attention because of fundamental research and future spintronic applications. MnSi with a non-centrosymmetric structure is a well-known material hosting a skyrmion phase. To date, the preparation of MnSi crystals has been investigated by using special instruments with an ultrahigh vacuum chamber. Here, we introduce a facile way to grow MnSi films on a sapphire substrate using a relatively low vacuum environment of conventional magnetron sputtering. Although the as-grown MnSi films have a polycrystalline nature, a stable skyrmion phase in a broad range of temperatures and magnetic fields is observed via magnetotransport properties including phenomenological scaling analysis of the Hall resistivity contribution. Our findings provide not only a general way to prepare the materials possessing skyrmion phases but also insight into further research to stimulate more degrees of freedom in our inquisitiveness.
first_indexed 2024-03-12T20:19:16Z
format Article
id doaj.art-444871c958e247629f8747c01874eaf2
institution Directory Open Access Journal
issn 1556-276X
language English
last_indexed 2024-03-12T20:19:16Z
publishDate 2021-01-01
publisher SpringerOpen
record_format Article
series Nanoscale Research Letters
spelling doaj.art-444871c958e247629f8747c01874eaf22023-08-02T01:03:23ZengSpringerOpenNanoscale Research Letters1556-276X2021-01-011611710.1186/s11671-020-03462-2Skyrmion Phase in MnSi Thin Films Grown on Sapphire by a Conventional SputteringWon-Young Choi0Hyun-Woo Bang1Seung-Hyun Chun2Sunghun Lee3Myung-Hwa Jung4Department of Physics, Sogang UniversityDepartment of Physics, Sogang UniversityDepartment of Physics, Sejong UniversityDepartment of Physics, Sejong UniversityDepartment of Physics, Sogang UniversityAbstract Topologically protected chiral skyrmions are an intriguing spin texture that has attracted much attention because of fundamental research and future spintronic applications. MnSi with a non-centrosymmetric structure is a well-known material hosting a skyrmion phase. To date, the preparation of MnSi crystals has been investigated by using special instruments with an ultrahigh vacuum chamber. Here, we introduce a facile way to grow MnSi films on a sapphire substrate using a relatively low vacuum environment of conventional magnetron sputtering. Although the as-grown MnSi films have a polycrystalline nature, a stable skyrmion phase in a broad range of temperatures and magnetic fields is observed via magnetotransport properties including phenomenological scaling analysis of the Hall resistivity contribution. Our findings provide not only a general way to prepare the materials possessing skyrmion phases but also insight into further research to stimulate more degrees of freedom in our inquisitiveness.https://doi.org/10.1186/s11671-020-03462-2MnSiSputteringPolycrystalSkyrmionTopological Hall effect
spellingShingle Won-Young Choi
Hyun-Woo Bang
Seung-Hyun Chun
Sunghun Lee
Myung-Hwa Jung
Skyrmion Phase in MnSi Thin Films Grown on Sapphire by a Conventional Sputtering
Nanoscale Research Letters
MnSi
Sputtering
Polycrystal
Skyrmion
Topological Hall effect
title Skyrmion Phase in MnSi Thin Films Grown on Sapphire by a Conventional Sputtering
title_full Skyrmion Phase in MnSi Thin Films Grown on Sapphire by a Conventional Sputtering
title_fullStr Skyrmion Phase in MnSi Thin Films Grown on Sapphire by a Conventional Sputtering
title_full_unstemmed Skyrmion Phase in MnSi Thin Films Grown on Sapphire by a Conventional Sputtering
title_short Skyrmion Phase in MnSi Thin Films Grown on Sapphire by a Conventional Sputtering
title_sort skyrmion phase in mnsi thin films grown on sapphire by a conventional sputtering
topic MnSi
Sputtering
Polycrystal
Skyrmion
Topological Hall effect
url https://doi.org/10.1186/s11671-020-03462-2
work_keys_str_mv AT wonyoungchoi skyrmionphaseinmnsithinfilmsgrownonsapphirebyaconventionalsputtering
AT hyunwoobang skyrmionphaseinmnsithinfilmsgrownonsapphirebyaconventionalsputtering
AT seunghyunchun skyrmionphaseinmnsithinfilmsgrownonsapphirebyaconventionalsputtering
AT sunghunlee skyrmionphaseinmnsithinfilmsgrownonsapphirebyaconventionalsputtering
AT myunghwajung skyrmionphaseinmnsithinfilmsgrownonsapphirebyaconventionalsputtering