Effect of Semiconductor Parasitic Capacitances on Ground Leakage Current in Three-Phase Current Source Inverters
This paper investigates the influence of power semiconductor parasitic components on the ground leakage current in the three-phase Current Source Inverter topology, in the literature called H7 or CSI7. This topology allows reducing converter conduction losses with respect to the classic CSI, but at...
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MDPI AG
2021-11-01
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Online Access: | https://www.mdpi.com/1996-1073/14/21/7364 |
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author | Giovanni Migliazza Emilio Carfagna Giampaolo Buticchi Fabio Immovilli Emilio Lorenzani |
author_facet | Giovanni Migliazza Emilio Carfagna Giampaolo Buticchi Fabio Immovilli Emilio Lorenzani |
author_sort | Giovanni Migliazza |
collection | DOAJ |
description | This paper investigates the influence of power semiconductor parasitic components on the ground leakage current in the three-phase Current Source Inverter topology, in the literature called H7 or CSI7. This topology allows reducing converter conduction losses with respect to the classic CSI, but at the same time makes the topology more susceptible to the parasitic capacitances of the semiconductors devices. In the present work, a grid-connected converter for photovoltaic power systems is considered as a case study, to investigate the equivalent circuit for ground leakage current. The same analysis can be extended to applications regarding electric drives, since the HF model of electric machines is characterized by stray capacitance between windings and the stator slots/motor frame. Simulation results proved the correctness of the proposed simplified common-mode circuit and highlighted the need of an additional common-mode inductor filter in case of resonance frequencies of the common-mode circuit close to harmonics of the power converter switching frequency. Experimental results are in agreement with the theoretical analysis. |
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id | doaj.art-44701e5a0e0c42609a20f7c4964076ab |
institution | Directory Open Access Journal |
issn | 1996-1073 |
language | English |
last_indexed | 2024-03-10T06:02:31Z |
publishDate | 2021-11-01 |
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series | Energies |
spelling | doaj.art-44701e5a0e0c42609a20f7c4964076ab2023-11-22T20:46:38ZengMDPI AGEnergies1996-10732021-11-011421736410.3390/en14217364Effect of Semiconductor Parasitic Capacitances on Ground Leakage Current in Three-Phase Current Source InvertersGiovanni Migliazza0Emilio Carfagna1Giampaolo Buticchi2Fabio Immovilli3Emilio Lorenzani4Department of Science and Methods for Engineering, University of Modena and Reggio Emilia, 42121 Reggio Emilia, ItalyDepartment of Science and Methods for Engineering, University of Modena and Reggio Emilia, 42121 Reggio Emilia, ItalyKey Laboratory of More Electric Aircraft Technology of Zhejiang Province, University of Nottingham Ningbo China, Ningbo 315100, ChinaDepartment of Science and Methods for Engineering, University of Modena and Reggio Emilia, 42121 Reggio Emilia, ItalyDepartment of Science and Methods for Engineering, University of Modena and Reggio Emilia, 42121 Reggio Emilia, ItalyThis paper investigates the influence of power semiconductor parasitic components on the ground leakage current in the three-phase Current Source Inverter topology, in the literature called H7 or CSI7. This topology allows reducing converter conduction losses with respect to the classic CSI, but at the same time makes the topology more susceptible to the parasitic capacitances of the semiconductors devices. In the present work, a grid-connected converter for photovoltaic power systems is considered as a case study, to investigate the equivalent circuit for ground leakage current. The same analysis can be extended to applications regarding electric drives, since the HF model of electric machines is characterized by stray capacitance between windings and the stator slots/motor frame. Simulation results proved the correctness of the proposed simplified common-mode circuit and highlighted the need of an additional common-mode inductor filter in case of resonance frequencies of the common-mode circuit close to harmonics of the power converter switching frequency. Experimental results are in agreement with the theoretical analysis.https://www.mdpi.com/1996-1073/14/21/7364current source inverterphotovoltaicparasitic capacitancecommon modeground leakage current |
spellingShingle | Giovanni Migliazza Emilio Carfagna Giampaolo Buticchi Fabio Immovilli Emilio Lorenzani Effect of Semiconductor Parasitic Capacitances on Ground Leakage Current in Three-Phase Current Source Inverters Energies current source inverter photovoltaic parasitic capacitance common mode ground leakage current |
title | Effect of Semiconductor Parasitic Capacitances on Ground Leakage Current in Three-Phase Current Source Inverters |
title_full | Effect of Semiconductor Parasitic Capacitances on Ground Leakage Current in Three-Phase Current Source Inverters |
title_fullStr | Effect of Semiconductor Parasitic Capacitances on Ground Leakage Current in Three-Phase Current Source Inverters |
title_full_unstemmed | Effect of Semiconductor Parasitic Capacitances on Ground Leakage Current in Three-Phase Current Source Inverters |
title_short | Effect of Semiconductor Parasitic Capacitances on Ground Leakage Current in Three-Phase Current Source Inverters |
title_sort | effect of semiconductor parasitic capacitances on ground leakage current in three phase current source inverters |
topic | current source inverter photovoltaic parasitic capacitance common mode ground leakage current |
url | https://www.mdpi.com/1996-1073/14/21/7364 |
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