Effect of Semiconductor Parasitic Capacitances on Ground Leakage Current in Three-Phase Current Source Inverters

This paper investigates the influence of power semiconductor parasitic components on the ground leakage current in the three-phase Current Source Inverter topology, in the literature called H7 or CSI7. This topology allows reducing converter conduction losses with respect to the classic CSI, but at...

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Main Authors: Giovanni Migliazza, Emilio Carfagna, Giampaolo Buticchi, Fabio Immovilli, Emilio Lorenzani
Format: Article
Language:English
Published: MDPI AG 2021-11-01
Series:Energies
Subjects:
Online Access:https://www.mdpi.com/1996-1073/14/21/7364
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author Giovanni Migliazza
Emilio Carfagna
Giampaolo Buticchi
Fabio Immovilli
Emilio Lorenzani
author_facet Giovanni Migliazza
Emilio Carfagna
Giampaolo Buticchi
Fabio Immovilli
Emilio Lorenzani
author_sort Giovanni Migliazza
collection DOAJ
description This paper investigates the influence of power semiconductor parasitic components on the ground leakage current in the three-phase Current Source Inverter topology, in the literature called H7 or CSI7. This topology allows reducing converter conduction losses with respect to the classic CSI, but at the same time makes the topology more susceptible to the parasitic capacitances of the semiconductors devices. In the present work, a grid-connected converter for photovoltaic power systems is considered as a case study, to investigate the equivalent circuit for ground leakage current. The same analysis can be extended to applications regarding electric drives, since the HF model of electric machines is characterized by stray capacitance between windings and the stator slots/motor frame. Simulation results proved the correctness of the proposed simplified common-mode circuit and highlighted the need of an additional common-mode inductor filter in case of resonance frequencies of the common-mode circuit close to harmonics of the power converter switching frequency. Experimental results are in agreement with the theoretical analysis.
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spelling doaj.art-44701e5a0e0c42609a20f7c4964076ab2023-11-22T20:46:38ZengMDPI AGEnergies1996-10732021-11-011421736410.3390/en14217364Effect of Semiconductor Parasitic Capacitances on Ground Leakage Current in Three-Phase Current Source InvertersGiovanni Migliazza0Emilio Carfagna1Giampaolo Buticchi2Fabio Immovilli3Emilio Lorenzani4Department of Science and Methods for Engineering, University of Modena and Reggio Emilia, 42121 Reggio Emilia, ItalyDepartment of Science and Methods for Engineering, University of Modena and Reggio Emilia, 42121 Reggio Emilia, ItalyKey Laboratory of More Electric Aircraft Technology of Zhejiang Province, University of Nottingham Ningbo China, Ningbo 315100, ChinaDepartment of Science and Methods for Engineering, University of Modena and Reggio Emilia, 42121 Reggio Emilia, ItalyDepartment of Science and Methods for Engineering, University of Modena and Reggio Emilia, 42121 Reggio Emilia, ItalyThis paper investigates the influence of power semiconductor parasitic components on the ground leakage current in the three-phase Current Source Inverter topology, in the literature called H7 or CSI7. This topology allows reducing converter conduction losses with respect to the classic CSI, but at the same time makes the topology more susceptible to the parasitic capacitances of the semiconductors devices. In the present work, a grid-connected converter for photovoltaic power systems is considered as a case study, to investigate the equivalent circuit for ground leakage current. The same analysis can be extended to applications regarding electric drives, since the HF model of electric machines is characterized by stray capacitance between windings and the stator slots/motor frame. Simulation results proved the correctness of the proposed simplified common-mode circuit and highlighted the need of an additional common-mode inductor filter in case of resonance frequencies of the common-mode circuit close to harmonics of the power converter switching frequency. Experimental results are in agreement with the theoretical analysis.https://www.mdpi.com/1996-1073/14/21/7364current source inverterphotovoltaicparasitic capacitancecommon modeground leakage current
spellingShingle Giovanni Migliazza
Emilio Carfagna
Giampaolo Buticchi
Fabio Immovilli
Emilio Lorenzani
Effect of Semiconductor Parasitic Capacitances on Ground Leakage Current in Three-Phase Current Source Inverters
Energies
current source inverter
photovoltaic
parasitic capacitance
common mode
ground leakage current
title Effect of Semiconductor Parasitic Capacitances on Ground Leakage Current in Three-Phase Current Source Inverters
title_full Effect of Semiconductor Parasitic Capacitances on Ground Leakage Current in Three-Phase Current Source Inverters
title_fullStr Effect of Semiconductor Parasitic Capacitances on Ground Leakage Current in Three-Phase Current Source Inverters
title_full_unstemmed Effect of Semiconductor Parasitic Capacitances on Ground Leakage Current in Three-Phase Current Source Inverters
title_short Effect of Semiconductor Parasitic Capacitances on Ground Leakage Current in Three-Phase Current Source Inverters
title_sort effect of semiconductor parasitic capacitances on ground leakage current in three phase current source inverters
topic current source inverter
photovoltaic
parasitic capacitance
common mode
ground leakage current
url https://www.mdpi.com/1996-1073/14/21/7364
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