Simulations of Operation Dynamics of Different Type GaN Particle Sensors
The operation dynamics of the capacitor-type and PIN diode type detectors based on GaN have been simulated using the dynamic and drift-diffusion models. The drift-diffusion current simulations have been implemented by employing the software package Synopsys TCAD Sentaurus. The monopolar and bipolar...
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| Format: | Article |
| Language: | English |
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MDPI AG
2015-03-01
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| Series: | Sensors |
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| Online Access: | http://www.mdpi.com/1424-8220/15/3/5429 |
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| author | Eugenijus Gaubas Tomas Ceponis Vidas Kalesinskas Jevgenij Pavlov Juozas Vysniauskas |
| author_facet | Eugenijus Gaubas Tomas Ceponis Vidas Kalesinskas Jevgenij Pavlov Juozas Vysniauskas |
| author_sort | Eugenijus Gaubas |
| collection | DOAJ |
| description | The operation dynamics of the capacitor-type and PIN diode type detectors based on GaN have been simulated using the dynamic and drift-diffusion models. The drift-diffusion current simulations have been implemented by employing the software package Synopsys TCAD Sentaurus. The monopolar and bipolar drift regimes have been analyzed by using dynamic models based on the Shockley-Ramo theorem. The carrier multiplication processes determined by impact ionization have been considered in order to compensate carrier lifetime reduction due to introduction of radiation defects into GaN detector material. |
| first_indexed | 2024-04-12T20:00:54Z |
| format | Article |
| id | doaj.art-44b4ec10055f45c6a5b52737dae711eb |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-04-12T20:00:54Z |
| publishDate | 2015-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj.art-44b4ec10055f45c6a5b52737dae711eb2022-12-22T03:18:32ZengMDPI AGSensors1424-82202015-03-011535429547310.3390/s150305429s150305429Simulations of Operation Dynamics of Different Type GaN Particle SensorsEugenijus Gaubas0Tomas Ceponis1Vidas Kalesinskas2Jevgenij Pavlov3Juozas Vysniauskas4Institute of Applied Research and Faculty of Physics, Vilnius University, Sauletekio av. 9-III, LT-10222 Vilnius, LithuaniaInstitute of Applied Research and Faculty of Physics, Vilnius University, Sauletekio av. 9-III, LT-10222 Vilnius, LithuaniaInstitute of Applied Research and Faculty of Physics, Vilnius University, Sauletekio av. 9-III, LT-10222 Vilnius, LithuaniaInstitute of Applied Research and Faculty of Physics, Vilnius University, Sauletekio av. 9-III, LT-10222 Vilnius, LithuaniaInstitute of Applied Research and Faculty of Physics, Vilnius University, Sauletekio av. 9-III, LT-10222 Vilnius, LithuaniaThe operation dynamics of the capacitor-type and PIN diode type detectors based on GaN have been simulated using the dynamic and drift-diffusion models. The drift-diffusion current simulations have been implemented by employing the software package Synopsys TCAD Sentaurus. The monopolar and bipolar drift regimes have been analyzed by using dynamic models based on the Shockley-Ramo theorem. The carrier multiplication processes determined by impact ionization have been considered in order to compensate carrier lifetime reduction due to introduction of radiation defects into GaN detector material.http://www.mdpi.com/1424-8220/15/3/5429GaNmultiplicationimpact ionizationcarrier lifetime |
| spellingShingle | Eugenijus Gaubas Tomas Ceponis Vidas Kalesinskas Jevgenij Pavlov Juozas Vysniauskas Simulations of Operation Dynamics of Different Type GaN Particle Sensors Sensors GaN multiplication impact ionization carrier lifetime |
| title | Simulations of Operation Dynamics of Different Type GaN Particle Sensors |
| title_full | Simulations of Operation Dynamics of Different Type GaN Particle Sensors |
| title_fullStr | Simulations of Operation Dynamics of Different Type GaN Particle Sensors |
| title_full_unstemmed | Simulations of Operation Dynamics of Different Type GaN Particle Sensors |
| title_short | Simulations of Operation Dynamics of Different Type GaN Particle Sensors |
| title_sort | simulations of operation dynamics of different type gan particle sensors |
| topic | GaN multiplication impact ionization carrier lifetime |
| url | http://www.mdpi.com/1424-8220/15/3/5429 |
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