| Summary: | This paper presents the results of investigations on the influence of thermal phenomena—self-heating in semiconductor devices and mutual thermal couplings between them—on the characteristics of selected electronics networks containing bipolar transistors (BJTs) or insulated gate bipolar transistors (IGBTs). Using the authors’ compact electrothermal models of the transistors mentioned above, the non-isothermal DC and dynamic characteristics of these devices and selected networks with these devices are calculated. Their selected characteristics are compared with the measurement results. The waveforms of currents in the considered networks are also determined taking into account thermal phenomena. Discrepancies between the obtained calculation and measurement results and the calculation results obtained without thermal phenomena are indicated. In particular, attention is paid to cooling conditions at which the networks under consideration may be damaged due to thermal phenomena.
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