THE MAIN METHODS OF FORMATION OF OXIDE LAYERS IN THE PRODUCTION OF SEMICONDUCTOR DEVICES AND IP
Film silicon oxide plays an important role in the process of creating silicon structures and semiconductor devices. The article is devoted to methods of formation of oxide layers, whichinclude: thermal oxidation, anodizing in electrolytes, pyrolytic deposition (deposition from the gas phase and plas...
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| Format: | Article |
| Language: | Russian |
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Dagestan State Technical University
2016-07-01
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| Series: | Вестник Дагестанского государственного технического университета: Технические науки |
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| Online Access: | https://vestnik.dgtu.ru/jour/article/view/130 |
| _version_ | 1797694860489129984 |
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| author | B. A. Shangereeva |
| author_facet | B. A. Shangereeva |
| author_sort | B. A. Shangereeva |
| collection | DOAJ |
| description | Film silicon oxide plays an important role in the process of creating silicon structures and semiconductor devices. The article is devoted to methods of formation of oxide layers, whichinclude: thermal oxidation, anodizing in electrolytes, pyrolytic deposition (deposition from the gas phase and plasma anodizing or oxidation. |
| first_indexed | 2024-03-12T03:03:59Z |
| format | Article |
| id | doaj.art-44df0033961f4c48ae1aca3c21e58314 |
| institution | Directory Open Access Journal |
| issn | 2073-6185 2542-095X |
| language | Russian |
| last_indexed | 2024-03-12T03:03:59Z |
| publishDate | 2016-07-01 |
| publisher | Dagestan State Technical University |
| record_format | Article |
| series | Вестник Дагестанского государственного технического университета: Технические науки |
| spelling | doaj.art-44df0033961f4c48ae1aca3c21e583142023-09-03T14:33:11ZrusDagestan State Technical UniversityВестник Дагестанского государственного технического университета: Технические науки2073-61852542-095X2016-07-01292263310.21822/2073-6185-2013-29-2-26-33129THE MAIN METHODS OF FORMATION OF OXIDE LAYERS IN THE PRODUCTION OF SEMICONDUCTOR DEVICES AND IPB. A. Shangereeva0Дагестанский государственный технический университетFilm silicon oxide plays an important role in the process of creating silicon structures and semiconductor devices. The article is devoted to methods of formation of oxide layers, whichinclude: thermal oxidation, anodizing in electrolytes, pyrolytic deposition (deposition from the gas phase and plasma anodizing or oxidation.https://vestnik.dgtu.ru/jour/article/view/130пленкаводородкислородокислениематериаладсорбция окислителяповерхностьдиффузияокиселпроцессполупроводникитермическое окислениепиролитическое осаждениеадгезия и формирование |
| spellingShingle | B. A. Shangereeva THE MAIN METHODS OF FORMATION OF OXIDE LAYERS IN THE PRODUCTION OF SEMICONDUCTOR DEVICES AND IP Вестник Дагестанского государственного технического университета: Технические науки пленка водород кислород окисление материал адсорбция окислителя поверхность диффузия окисел процесс полупроводники термическое окисление пиролитическое осаждение адгезия и формирование |
| title | THE MAIN METHODS OF FORMATION OF OXIDE LAYERS IN THE PRODUCTION OF SEMICONDUCTOR DEVICES AND IP |
| title_full | THE MAIN METHODS OF FORMATION OF OXIDE LAYERS IN THE PRODUCTION OF SEMICONDUCTOR DEVICES AND IP |
| title_fullStr | THE MAIN METHODS OF FORMATION OF OXIDE LAYERS IN THE PRODUCTION OF SEMICONDUCTOR DEVICES AND IP |
| title_full_unstemmed | THE MAIN METHODS OF FORMATION OF OXIDE LAYERS IN THE PRODUCTION OF SEMICONDUCTOR DEVICES AND IP |
| title_short | THE MAIN METHODS OF FORMATION OF OXIDE LAYERS IN THE PRODUCTION OF SEMICONDUCTOR DEVICES AND IP |
| title_sort | main methods of formation of oxide layers in the production of semiconductor devices and ip |
| topic | пленка водород кислород окисление материал адсорбция окислителя поверхность диффузия окисел процесс полупроводники термическое окисление пиролитическое осаждение адгезия и формирование |
| url | https://vestnik.dgtu.ru/jour/article/view/130 |
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