Field emission enhancement of Au-Si nano-particle-decorated silicon nanowires
<p>Abstract</p> <p>Au-Si nano-particle-decorated silicon nanowire arrays have been fabricated by Au film deposition on silicon nanowire array substrates and then post-thermal annealing under hydrogen atmosphere. Field emission measurements illustrated that the turn-on fields of the...
Main Authors: | , , , , , |
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Format: | Article |
Language: | English |
Published: |
SpringerOpen
2011-01-01
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Series: | Nanoscale Research Letters |
Online Access: | http://www.nanoscalereslett.com/content/6/1/176 |
Summary: | <p>Abstract</p> <p>Au-Si nano-particle-decorated silicon nanowire arrays have been fabricated by Au film deposition on silicon nanowire array substrates and then post-thermal annealing under hydrogen atmosphere. Field emission measurements illustrated that the turn-on fields of the non-annealed Au-coated SiNWs were 6.02 to 7.51 V/μm, higher than that of the as-grown silicon nanowires, which is about 5.01 V/μm. Meanwhile, after being annealed above 650°C, Au-Si nano-particles were synthesized on the top surface of the silicon nanowire arrays and the one-dimensional Au-Si nano-particle-decorated SiNWs had a much lower turn-on field, 1.95 V/μm. The results demonstrated that annealed composite silicon nanowire array-based electron field emitters may have great advantages over many other emitters.</p> |
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ISSN: | 1931-7573 1556-276X |