Composition Dependence Structural and Optical Properties of Silicon Germanium (Si<sub>χ</sub>Ge<sub>1−χ</sub>) Thin Films
This study investigates the structural and optical characteristics of Silicon Germanium (SiGe) thin films with varying compositions and annealing temperatures for potential use in electronic and optoelectronic devices. Si<sub>0.8</sub>Ge<sub>0.2</sub> and Si<sub>0.9<...
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| Format: | Article |
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MDPI AG
2023-05-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/13/5/791 |
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| author | Syafiqa Nasir Fuei Pien Chee Bablu Kumar Ghosh Muhammad Izzuddin Rumaling Rosfayanti Rasmidi Mivolil Duinong Floressy Juhim |
| author_facet | Syafiqa Nasir Fuei Pien Chee Bablu Kumar Ghosh Muhammad Izzuddin Rumaling Rosfayanti Rasmidi Mivolil Duinong Floressy Juhim |
| author_sort | Syafiqa Nasir |
| collection | DOAJ |
| description | This study investigates the structural and optical characteristics of Silicon Germanium (SiGe) thin films with varying compositions and annealing temperatures for potential use in electronic and optoelectronic devices. Si<sub>0.8</sub>Ge<sub>0.2</sub> and Si<sub>0.9</sub>Ge<sub>0.1</sub> films were deposited onto a high-temperature quartz substrate and annealed at 600 °C, 700 °C, and 800 °C before being evaluated using an X-Ray Diffractometer (XRD), Atomic Force Microscopy (AFM), and a UV-Vis Spectrometer for structural and optical properties. The results show that increasing the annealing temperature results in an increase in crystalline size for both compositions. The transmittance for Si<sub>0.8</sub>Ge<sub>0.2</sub> decreases slightly with increasing temperature, while Si<sub>0.9</sub>Ge<sub>0.1</sub> remains constant. The optical band gap for Si<sub>0.9</sub>Ge<sub>0.1</sub> thin film is 5.43 eV at 800 °C, while Si<sub>0.8</sub>Ge<sub>0.2</sub> thin film is 5.6 eV at the same annealing temperature. XRD data and surface analysis reveal significant differences between the band edges of SiGe nano-structure materials and bulk crystals. However, the possibility of a SiGe nano-crystal large band gap requires further investigation based on our study and related research works. |
| first_indexed | 2024-03-11T03:49:34Z |
| format | Article |
| id | doaj.art-450404cdef2c40e795ee02ee2ed8aece |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-11T03:49:34Z |
| publishDate | 2023-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-450404cdef2c40e795ee02ee2ed8aece2023-11-18T00:59:58ZengMDPI AGCrystals2073-43522023-05-0113579110.3390/cryst13050791Composition Dependence Structural and Optical Properties of Silicon Germanium (Si<sub>χ</sub>Ge<sub>1−χ</sub>) Thin FilmsSyafiqa Nasir0Fuei Pien Chee1Bablu Kumar Ghosh2Muhammad Izzuddin Rumaling3Rosfayanti Rasmidi4Mivolil Duinong5Floressy Juhim6Faculty of Engineering, Universiti Malaysia Sabah, Kota Kinabalu 88400, Sabah, MalaysiaFaculty of Science and Natural Resources, Kota Kinabalu 88400, Sabah, MalaysiaFaculty of Engineering, Universiti Malaysia Sabah, Kota Kinabalu 88400, Sabah, MalaysiaFaculty of Science and Natural Resources, Kota Kinabalu 88400, Sabah, MalaysiaFaculty of Applied Science, Universiti Teknologi MARA Sabah Branch, Kota Kinabalu 88400, Sabah, MalaysiaFaculty of Science and Natural Resources, Kota Kinabalu 88400, Sabah, MalaysiaFaculty of Science and Natural Resources, Kota Kinabalu 88400, Sabah, MalaysiaThis study investigates the structural and optical characteristics of Silicon Germanium (SiGe) thin films with varying compositions and annealing temperatures for potential use in electronic and optoelectronic devices. Si<sub>0.8</sub>Ge<sub>0.2</sub> and Si<sub>0.9</sub>Ge<sub>0.1</sub> films were deposited onto a high-temperature quartz substrate and annealed at 600 °C, 700 °C, and 800 °C before being evaluated using an X-Ray Diffractometer (XRD), Atomic Force Microscopy (AFM), and a UV-Vis Spectrometer for structural and optical properties. The results show that increasing the annealing temperature results in an increase in crystalline size for both compositions. The transmittance for Si<sub>0.8</sub>Ge<sub>0.2</sub> decreases slightly with increasing temperature, while Si<sub>0.9</sub>Ge<sub>0.1</sub> remains constant. The optical band gap for Si<sub>0.9</sub>Ge<sub>0.1</sub> thin film is 5.43 eV at 800 °C, while Si<sub>0.8</sub>Ge<sub>0.2</sub> thin film is 5.6 eV at the same annealing temperature. XRD data and surface analysis reveal significant differences between the band edges of SiGe nano-structure materials and bulk crystals. However, the possibility of a SiGe nano-crystal large band gap requires further investigation based on our study and related research works.https://www.mdpi.com/2073-4352/13/5/791SiGethin filmnano-crystalXRDopto-electronicalloy |
| spellingShingle | Syafiqa Nasir Fuei Pien Chee Bablu Kumar Ghosh Muhammad Izzuddin Rumaling Rosfayanti Rasmidi Mivolil Duinong Floressy Juhim Composition Dependence Structural and Optical Properties of Silicon Germanium (Si<sub>χ</sub>Ge<sub>1−χ</sub>) Thin Films Crystals SiGe thin film nano-crystal XRD opto-electronic alloy |
| title | Composition Dependence Structural and Optical Properties of Silicon Germanium (Si<sub>χ</sub>Ge<sub>1−χ</sub>) Thin Films |
| title_full | Composition Dependence Structural and Optical Properties of Silicon Germanium (Si<sub>χ</sub>Ge<sub>1−χ</sub>) Thin Films |
| title_fullStr | Composition Dependence Structural and Optical Properties of Silicon Germanium (Si<sub>χ</sub>Ge<sub>1−χ</sub>) Thin Films |
| title_full_unstemmed | Composition Dependence Structural and Optical Properties of Silicon Germanium (Si<sub>χ</sub>Ge<sub>1−χ</sub>) Thin Films |
| title_short | Composition Dependence Structural and Optical Properties of Silicon Germanium (Si<sub>χ</sub>Ge<sub>1−χ</sub>) Thin Films |
| title_sort | composition dependence structural and optical properties of silicon germanium si sub χ sub ge sub 1 χ sub thin films |
| topic | SiGe thin film nano-crystal XRD opto-electronic alloy |
| url | https://www.mdpi.com/2073-4352/13/5/791 |
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