Effect of etching stop layer on characteristics of amorphous IGZO thin film transistor fabricated at low temperature
Transparent bottom-gate amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin-film transistors (TFTs) had been successfully fabricated at relative low temperature. The influence of reaction gas ratio of N2O and SiH4 during the growth of etching stop layer (SiOx) on the characteristics of a-IGZO TFTs was...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2013-03-01
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| Series: | AIP Advances |
| Online Access: | http://link.aip.org/link/doi/10.1063/1.4798305 |