Bias Voltage Dependence of Sensing Characteristics in Tunneling Magnetoresistance Sensors
One of the characteristic features of tunneling magnetoresistance (TMR) sensors is a strong influence of bias voltage on tunneling current. Since fundamental sensing characteristics of the sensors are primarily determined by the tunneling current, the bias voltage should impact these characteristics...
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MDPI AG
2021-04-01
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| Series: | Sensors |
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| Online Access: | https://www.mdpi.com/1424-8220/21/7/2495 |
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| author | Piotr Wiśniowski Maciej Nawrocki Jerzy Wrona Susana Cardoso Paulo. P. Freitas |
| author_facet | Piotr Wiśniowski Maciej Nawrocki Jerzy Wrona Susana Cardoso Paulo. P. Freitas |
| author_sort | Piotr Wiśniowski |
| collection | DOAJ |
| description | One of the characteristic features of tunneling magnetoresistance (TMR) sensors is a strong influence of bias voltage on tunneling current. Since fundamental sensing characteristics of the sensors are primarily determined by the tunneling current, the bias voltage should impact these characteristics. Previous research has indeed showed the influence of the bias voltage on the magnetic field detection and sensitivity. However, the effect has not been investigated for nonlinearity and hysteresis and the influence of bias voltage polarity has not yet been addressed. Therefore, this paper systematically investigates the dependence of field sensitivity, nonlinearity, hysteresis and magnetic field detection of CoFeB/MgO/CoFeB-based magnetoresistance sensors on bias voltage magnitude and polarity. The sensitivity and field detection of all sensors improved significantly with the bias, whereas the nonlinearity and hysteresis deteriorated. The sensitivity increased considerably (up to 32 times) and linearly with bias up to 0.6 V. The field detection also decreased substantially (up 3.9 times) with bias and exhibited the minimum values for the same magnitude under both polarities. Significant and linear increases with bias were also observed for nonlinearity (up to 26 times) and hysteresis (up to 33 times). Moreover, not only the voltage magnitude but also the polarity had a significant effect on the sensing characteristics. This significant, linear and simultaneous effect of improvement and deterioration of the sensing characteristics with bias indicates that both bias voltage magnitude and polarity are key factors in the control and modification of these characteristics. |
| first_indexed | 2024-03-10T12:37:35Z |
| format | Article |
| id | doaj.art-45349fe451e44a9c9b500cea1d0dbc09 |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-03-10T12:37:35Z |
| publishDate | 2021-04-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj.art-45349fe451e44a9c9b500cea1d0dbc092023-11-21T14:06:48ZengMDPI AGSensors1424-82202021-04-01217249510.3390/s21072495Bias Voltage Dependence of Sensing Characteristics in Tunneling Magnetoresistance SensorsPiotr Wiśniowski0Maciej Nawrocki1Jerzy Wrona2Susana Cardoso3Paulo. P. Freitas4Institute of Electronics, AGH University of Science and Technology, 30-059 Krakow, PolandInstitute of Electronics, AGH University of Science and Technology, 30-059 Krakow, PolandSingulus Technologies AG, 63796 Kahl am Main, GermanyINESC Microsystems and Nanotechnologies, INESC-MN, and IN, 1000-029 Lisbon, PortugalINESC Microsystems and Nanotechnologies, INESC-MN, and IN, 1000-029 Lisbon, PortugalOne of the characteristic features of tunneling magnetoresistance (TMR) sensors is a strong influence of bias voltage on tunneling current. Since fundamental sensing characteristics of the sensors are primarily determined by the tunneling current, the bias voltage should impact these characteristics. Previous research has indeed showed the influence of the bias voltage on the magnetic field detection and sensitivity. However, the effect has not been investigated for nonlinearity and hysteresis and the influence of bias voltage polarity has not yet been addressed. Therefore, this paper systematically investigates the dependence of field sensitivity, nonlinearity, hysteresis and magnetic field detection of CoFeB/MgO/CoFeB-based magnetoresistance sensors on bias voltage magnitude and polarity. The sensitivity and field detection of all sensors improved significantly with the bias, whereas the nonlinearity and hysteresis deteriorated. The sensitivity increased considerably (up to 32 times) and linearly with bias up to 0.6 V. The field detection also decreased substantially (up 3.9 times) with bias and exhibited the minimum values for the same magnitude under both polarities. Significant and linear increases with bias were also observed for nonlinearity (up to 26 times) and hysteresis (up to 33 times). Moreover, not only the voltage magnitude but also the polarity had a significant effect on the sensing characteristics. This significant, linear and simultaneous effect of improvement and deterioration of the sensing characteristics with bias indicates that both bias voltage magnitude and polarity are key factors in the control and modification of these characteristics.https://www.mdpi.com/1424-8220/21/7/2495magnetic field sensorstunneling magnetoresisatnce sensorssensing characteristicsbias voltage effect on sensing characteristics |
| spellingShingle | Piotr Wiśniowski Maciej Nawrocki Jerzy Wrona Susana Cardoso Paulo. P. Freitas Bias Voltage Dependence of Sensing Characteristics in Tunneling Magnetoresistance Sensors Sensors magnetic field sensors tunneling magnetoresisatnce sensors sensing characteristics bias voltage effect on sensing characteristics |
| title | Bias Voltage Dependence of Sensing Characteristics in Tunneling Magnetoresistance Sensors |
| title_full | Bias Voltage Dependence of Sensing Characteristics in Tunneling Magnetoresistance Sensors |
| title_fullStr | Bias Voltage Dependence of Sensing Characteristics in Tunneling Magnetoresistance Sensors |
| title_full_unstemmed | Bias Voltage Dependence of Sensing Characteristics in Tunneling Magnetoresistance Sensors |
| title_short | Bias Voltage Dependence of Sensing Characteristics in Tunneling Magnetoresistance Sensors |
| title_sort | bias voltage dependence of sensing characteristics in tunneling magnetoresistance sensors |
| topic | magnetic field sensors tunneling magnetoresisatnce sensors sensing characteristics bias voltage effect on sensing characteristics |
| url | https://www.mdpi.com/1424-8220/21/7/2495 |
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