Large and Tunable Magnetoresistance in Cr1−xTe/Al2O3/Cr1−xTe Vertical Spin Valve Device
Abstract The recent discovery of 2D ferromagnetic materials provides new opportunities for fabricating 2D ferromagnets‐based spin valve devices and exploring related novel physics. However, up to now, almost all works adopt a spin valve configuration by inserting different types of 2D materials into...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2023-01-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202200823 |
| _version_ | 1797772516549197824 |
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| author | Zhansheng gao Jiabiao Chen Zheshan Zhang Zhaochao Liu Yu Zhang Lingyun Xu Jinxiong Wu Feng Luo |
| author_facet | Zhansheng gao Jiabiao Chen Zheshan Zhang Zhaochao Liu Yu Zhang Lingyun Xu Jinxiong Wu Feng Luo |
| author_sort | Zhansheng gao |
| collection | DOAJ |
| description | Abstract The recent discovery of 2D ferromagnetic materials provides new opportunities for fabricating 2D ferromagnets‐based spin valve devices and exploring related novel physics. However, up to now, almost all works adopt a spin valve configuration by inserting different types of 2D materials into the gap between two 2D ferromagnetic electrodes as barrier spacer, rather than applying traditional tunneling barrier, such as Al2O3 films grown by atomic layer deposition (ALD), probably attributed to the instability and incompatibility for the widely explored 2D ferromagnets (CrI3, Fe3GeTe2) to the ALD growth process. Here, Cr1−xTe, an air‐stable 2D ferromagnetic metal grown by chemical vapor deposition, show excellent compatibility to ALD process of depositing Al2O3 films. The nonencapsulated Cr1−xTe/Al2O3/Cr1−xTe vertical spin valve devices demonstrate high magnetoresistance ratio of ≈28% and large spin polarization of 0.36 at 2 K. Furthermore, a gradual evolution from tunneling to metallic spin‐valve behavior is found upon decreasing Al2O3 spacer thickness. The work is constructive and illuminating for connecting the 2D ferromagnetic electrodes with traditional tunneling spacers for fundamental research and device applications. |
| first_indexed | 2024-03-12T21:52:02Z |
| format | Article |
| id | doaj.art-4538054a4f0f4bd4b31079533558d665 |
| institution | Directory Open Access Journal |
| issn | 2199-160X |
| language | English |
| last_indexed | 2024-03-12T21:52:02Z |
| publishDate | 2023-01-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj.art-4538054a4f0f4bd4b31079533558d6652023-07-26T01:35:51ZengWiley-VCHAdvanced Electronic Materials2199-160X2023-01-0191n/an/a10.1002/aelm.202200823Large and Tunable Magnetoresistance in Cr1−xTe/Al2O3/Cr1−xTe Vertical Spin Valve DeviceZhansheng gao0Jiabiao Chen1Zheshan Zhang2Zhaochao Liu3Yu Zhang4Lingyun Xu5Jinxiong Wu6Feng Luo7Tianjin Key Lab for Rare Earth Materials and Applications Center for Rare Earth and Inorganic Functional Materials Smart Sensor Interdisciplinary Science Center School of Materials Science and Engineering Nankai University Tianjin 300350 P. R. ChinaTianjin Key Lab for Rare Earth Materials and Applications Center for Rare Earth and Inorganic Functional Materials Smart Sensor Interdisciplinary Science Center School of Materials Science and Engineering Nankai University Tianjin 300350 P. R. ChinaTianjin Key Lab for Rare Earth Materials and Applications Center for Rare Earth and Inorganic Functional Materials Smart Sensor Interdisciplinary Science Center School of Materials Science and Engineering Nankai University Tianjin 300350 P. R. ChinaTianjin Key Lab for Rare Earth Materials and Applications Center for Rare Earth and Inorganic Functional Materials Smart Sensor Interdisciplinary Science Center School of Materials Science and Engineering Nankai University Tianjin 300350 P. R. ChinaTianjin Key Lab for Rare Earth Materials and Applications Center for Rare Earth and Inorganic Functional Materials Smart Sensor Interdisciplinary Science Center School of Materials Science and Engineering Nankai University Tianjin 300350 P. R. ChinaTianjin Key Lab for Rare Earth Materials and Applications Center for Rare Earth and Inorganic Functional Materials Smart Sensor Interdisciplinary Science Center School of Materials Science and Engineering Nankai University Tianjin 300350 P. R. ChinaTianjin Key Lab for Rare Earth Materials and Applications Center for Rare Earth and Inorganic Functional Materials Smart Sensor Interdisciplinary Science Center School of Materials Science and Engineering Nankai University Tianjin 300350 P. R. ChinaTianjin Key Lab for Rare Earth Materials and Applications Center for Rare Earth and Inorganic Functional Materials Smart Sensor Interdisciplinary Science Center School of Materials Science and Engineering Nankai University Tianjin 300350 P. R. ChinaAbstract The recent discovery of 2D ferromagnetic materials provides new opportunities for fabricating 2D ferromagnets‐based spin valve devices and exploring related novel physics. However, up to now, almost all works adopt a spin valve configuration by inserting different types of 2D materials into the gap between two 2D ferromagnetic electrodes as barrier spacer, rather than applying traditional tunneling barrier, such as Al2O3 films grown by atomic layer deposition (ALD), probably attributed to the instability and incompatibility for the widely explored 2D ferromagnets (CrI3, Fe3GeTe2) to the ALD growth process. Here, Cr1−xTe, an air‐stable 2D ferromagnetic metal grown by chemical vapor deposition, show excellent compatibility to ALD process of depositing Al2O3 films. The nonencapsulated Cr1−xTe/Al2O3/Cr1−xTe vertical spin valve devices demonstrate high magnetoresistance ratio of ≈28% and large spin polarization of 0.36 at 2 K. Furthermore, a gradual evolution from tunneling to metallic spin‐valve behavior is found upon decreasing Al2O3 spacer thickness. The work is constructive and illuminating for connecting the 2D ferromagnetic electrodes with traditional tunneling spacers for fundamental research and device applications.https://doi.org/10.1002/aelm.202200823atomic layer depositionCr 1− xTe/Al 2O 3/Cr 1− xTefree of encapsulationtunable magnetoresistancevertical spin valve |
| spellingShingle | Zhansheng gao Jiabiao Chen Zheshan Zhang Zhaochao Liu Yu Zhang Lingyun Xu Jinxiong Wu Feng Luo Large and Tunable Magnetoresistance in Cr1−xTe/Al2O3/Cr1−xTe Vertical Spin Valve Device Advanced Electronic Materials atomic layer deposition Cr 1− xTe/Al 2O 3/Cr 1− xTe free of encapsulation tunable magnetoresistance vertical spin valve |
| title | Large and Tunable Magnetoresistance in Cr1−xTe/Al2O3/Cr1−xTe Vertical Spin Valve Device |
| title_full | Large and Tunable Magnetoresistance in Cr1−xTe/Al2O3/Cr1−xTe Vertical Spin Valve Device |
| title_fullStr | Large and Tunable Magnetoresistance in Cr1−xTe/Al2O3/Cr1−xTe Vertical Spin Valve Device |
| title_full_unstemmed | Large and Tunable Magnetoresistance in Cr1−xTe/Al2O3/Cr1−xTe Vertical Spin Valve Device |
| title_short | Large and Tunable Magnetoresistance in Cr1−xTe/Al2O3/Cr1−xTe Vertical Spin Valve Device |
| title_sort | large and tunable magnetoresistance in cr1 xte al2o3 cr1 xte vertical spin valve device |
| topic | atomic layer deposition Cr 1− xTe/Al 2O 3/Cr 1− xTe free of encapsulation tunable magnetoresistance vertical spin valve |
| url | https://doi.org/10.1002/aelm.202200823 |
| work_keys_str_mv | AT zhanshenggao largeandtunablemagnetoresistanceincr1xteal2o3cr1xteverticalspinvalvedevice AT jiabiaochen largeandtunablemagnetoresistanceincr1xteal2o3cr1xteverticalspinvalvedevice AT zheshanzhang largeandtunablemagnetoresistanceincr1xteal2o3cr1xteverticalspinvalvedevice AT zhaochaoliu largeandtunablemagnetoresistanceincr1xteal2o3cr1xteverticalspinvalvedevice AT yuzhang largeandtunablemagnetoresistanceincr1xteal2o3cr1xteverticalspinvalvedevice AT lingyunxu largeandtunablemagnetoresistanceincr1xteal2o3cr1xteverticalspinvalvedevice AT jinxiongwu largeandtunablemagnetoresistanceincr1xteal2o3cr1xteverticalspinvalvedevice AT fengluo largeandtunablemagnetoresistanceincr1xteal2o3cr1xteverticalspinvalvedevice |