Nitrogen and group-IV (Si, Ge) vacancy color centres in nano-diamonds: photoluminescence study at high temperature (25 °C–600 °C)
Raman scattering and photoluminescence measurements have been carried out on nano-diamonds containing Nitrogen-vacancy (NV ^− ), Silicon-Vacancy (SiV ^− ) and Germanium-vacancy (GeV ^− ) synthesized by high pressure and high temperature method. Optical zero-phonon-line transition of these negatively...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2020-01-01
|
| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/ab6647 |