In(Ga)N Nanostructures and Devices Grown by Molecular Beam Epitaxy and Metal-Assisted Photochemical Etching

In(Ga)N Nanostructures and Devices Grown by Molecular Beam Epitaxy and Metal-Assisted Photochemical Etching

This review summarizes the recent research on nitride nanostructures and their applications. We cover recent advances in the synthesis and growth of porous structures and low-dimensional nitride nanostructures via metal-assisted photochemical etching and molecular beam epitaxy. The growth of nitride...

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Bibliographic Details
Main Authors: Abdul Kareem K. Soopy, Zhaonan Li, Tianyi Tang, Jiaqian Sun, Bo Xu, Chao Zhao, Adel Najar
Format: Article
Language:English
Published: MDPI AG 2021-01-01
Series:Nanomaterials
Subjects:
GaN
InGaN
photochemical etch
molecular beam epitaxy
Online Access:https://www.mdpi.com/2079-4991/11/1/126

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