Efficiency Improvement of Industrial Silicon Solar Cells by the POCl<sub>3</sub> Diffusion Process
To improve the efficiency of polycrystalline silicon solar cells, process optimization is a key technology in the photovoltaic industry. Despite the efficiency of this technique to be reproducible, economic, and simple, it presents a major inconvenience to have a heavily doped region near the surfac...
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MDPI AG
2023-02-01
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| Series: | Materials |
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| Online Access: | https://www.mdpi.com/1996-1944/16/5/1824 |
| _version_ | 1797614947290578944 |
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| author | Xiaodong Xu Wangping Wu Qinqin Wang |
| author_facet | Xiaodong Xu Wangping Wu Qinqin Wang |
| author_sort | Xiaodong Xu |
| collection | DOAJ |
| description | To improve the efficiency of polycrystalline silicon solar cells, process optimization is a key technology in the photovoltaic industry. Despite the efficiency of this technique to be reproducible, economic, and simple, it presents a major inconvenience to have a heavily doped region near the surface which induces a high minority carrier recombination. To limit this effect, an optimization of diffused phosphorous profiles is required. A “low-high-low” temperature step of the POCl<sub>3</sub> diffusion process was developed to improve the efficiency of industrial-type polycrystalline silicon solar cells. The low surface concentration of phosphorus doping of 4.54 × 10<sup>20</sup> atoms/cm<sup>3</sup> and junction depth of 0.31 μm at a dopant concentration of <i>N</i> = 10<sup>17</sup> atoms/cm<sup>3</sup> were obtained. The open-circuit voltage and fill factor of solar cells increased up to 1 mV and 0.30%, compared with the online low-temperature diffusion process, respectively. The efficiency of solar cells and the power of PV cells were increased by 0.1% and 1 W, respectively. This POCl<sub>3</sub> diffusion process effectively improved the overall efficiency of industrial-type polycrystalline silicon solar cells in this solar field. |
| first_indexed | 2024-03-11T07:19:29Z |
| format | Article |
| id | doaj.art-4559cc3d87fa4ece956ceba6f6348fec |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-11T07:19:29Z |
| publishDate | 2023-02-01 |
| publisher | MDPI AG |
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| series | Materials |
| spelling | doaj.art-4559cc3d87fa4ece956ceba6f6348fec2023-11-17T08:03:24ZengMDPI AGMaterials1996-19442023-02-01165182410.3390/ma16051824Efficiency Improvement of Industrial Silicon Solar Cells by the POCl<sub>3</sub> Diffusion ProcessXiaodong Xu0Wangping Wu1Qinqin Wang2Electrochemistry and Corrosion Laboratory, School of Mechanical Engineering, Changzhou University, Changzhou 213164, ChinaElectrochemistry and Corrosion Laboratory, School of Mechanical Engineering, Changzhou University, Changzhou 213164, ChinaSchool of Mechanical Engineering, Yangzhou University, Yangzhou 225127, ChinaTo improve the efficiency of polycrystalline silicon solar cells, process optimization is a key technology in the photovoltaic industry. Despite the efficiency of this technique to be reproducible, economic, and simple, it presents a major inconvenience to have a heavily doped region near the surface which induces a high minority carrier recombination. To limit this effect, an optimization of diffused phosphorous profiles is required. A “low-high-low” temperature step of the POCl<sub>3</sub> diffusion process was developed to improve the efficiency of industrial-type polycrystalline silicon solar cells. The low surface concentration of phosphorus doping of 4.54 × 10<sup>20</sup> atoms/cm<sup>3</sup> and junction depth of 0.31 μm at a dopant concentration of <i>N</i> = 10<sup>17</sup> atoms/cm<sup>3</sup> were obtained. The open-circuit voltage and fill factor of solar cells increased up to 1 mV and 0.30%, compared with the online low-temperature diffusion process, respectively. The efficiency of solar cells and the power of PV cells were increased by 0.1% and 1 W, respectively. This POCl<sub>3</sub> diffusion process effectively improved the overall efficiency of industrial-type polycrystalline silicon solar cells in this solar field.https://www.mdpi.com/1996-1944/16/5/1824polycrystalline siliconsolar cellslow-high-lowphosphorus diffusion |
| spellingShingle | Xiaodong Xu Wangping Wu Qinqin Wang Efficiency Improvement of Industrial Silicon Solar Cells by the POCl<sub>3</sub> Diffusion Process Materials polycrystalline silicon solar cells low-high-low phosphorus diffusion |
| title | Efficiency Improvement of Industrial Silicon Solar Cells by the POCl<sub>3</sub> Diffusion Process |
| title_full | Efficiency Improvement of Industrial Silicon Solar Cells by the POCl<sub>3</sub> Diffusion Process |
| title_fullStr | Efficiency Improvement of Industrial Silicon Solar Cells by the POCl<sub>3</sub> Diffusion Process |
| title_full_unstemmed | Efficiency Improvement of Industrial Silicon Solar Cells by the POCl<sub>3</sub> Diffusion Process |
| title_short | Efficiency Improvement of Industrial Silicon Solar Cells by the POCl<sub>3</sub> Diffusion Process |
| title_sort | efficiency improvement of industrial silicon solar cells by the pocl sub 3 sub diffusion process |
| topic | polycrystalline silicon solar cells low-high-low phosphorus diffusion |
| url | https://www.mdpi.com/1996-1944/16/5/1824 |
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