Design of the Low Noise Amplifier Circuit in Band L for Improve the Gain and Circuit Stability
In this paper, focuses on the design of Low Noise Amplifier circuitry in the frequency band L. This circuit is designed using the 0.18 nm CMOS transistor technology, which consists of two transistor Stage. The purpose of this research is to improve the cost of: Increase Gain - Increase circuit linea...
Main Authors: | Arash Omidi, Rohalah Karami, Parisa Sadat Emadi, Hamed Moradi |
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Format: | Article |
Language: | English |
Published: |
Ital Publication
2017-12-01
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Series: | Emerging Science Journal |
Subjects: | |
Online Access: | https://ijournalse.org/index.php/ESJ/article/view/51 |
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