An All‐Inorganic, Transparent, Flexible, and Nonvolatile Resistive Memory
Abstract A rapid surge in the research of lightweight, invisible, and flexible electronics is occurring with the arrival of Internet of Things (IoT). However, multifunctional perovskite oxide electronics are commonly hard and should be synthesized at high temperature and oxygen ambience, where most...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2018-12-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.201800412 |
| _version_ | 1827797429094711296 |
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| author | Yuxi Yang Wenxiu Gao Zhongshuai Xie Yaojin Wang Guoliang Yuan Jun‐Ming Liu |
| author_facet | Yuxi Yang Wenxiu Gao Zhongshuai Xie Yaojin Wang Guoliang Yuan Jun‐Ming Liu |
| author_sort | Yuxi Yang |
| collection | DOAJ |
| description | Abstract A rapid surge in the research of lightweight, invisible, and flexible electronics is occurring with the arrival of Internet of Things (IoT). However, multifunctional perovskite oxide electronics are commonly hard and should be synthesized at high temperature and oxygen ambience, where most transparent conductive films will become brittle or highly resistive. Thus, the realization of transparent and flexible nonvolatile perovskite oxide resistive memory remains a big challenge. Here, a transparent, flexible, nonvolatile, and all‐inorganic memory with the mica substrate is prepared: the 2.7 wt% Ag‐doped indium–tin oxide (Ag–ITO) film as bottom electrodes, the BaTi0.95Co0.05O3−δ (BTCO) film as resistive‐switching functional layer, and the Ag/ITO films as top electrodes. The Ag–ITO/BTCO/Ag/ITO heterosturcture shows a unipolar resistive‐switching behavior, and its high/low resistance ratio is up to 5 × 103 under a low operating voltage (<2.8 V) with fast response speed (≈50 ns). Either high‐ or low‐resistance states remain stable even after the 14 400 cycles' dynamic bending test with the minimum radius of 3 mm. Additionally, the bipolar resistive‐switching characteristic is observed in the ≈85 nm diameter region. As a result, such resistive memory shows potential to be used in many transparent and flexible devices, such as electronic skins and flexible displays. |
| first_indexed | 2024-03-11T19:22:00Z |
| format | Article |
| id | doaj.art-45be7fc5fe7f46c491c88984f991ffd2 |
| institution | Directory Open Access Journal |
| issn | 2199-160X |
| language | English |
| last_indexed | 2024-03-11T19:22:00Z |
| publishDate | 2018-12-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj.art-45be7fc5fe7f46c491c88984f991ffd22023-10-07T03:29:12ZengWiley-VCHAdvanced Electronic Materials2199-160X2018-12-01412n/an/a10.1002/aelm.201800412An All‐Inorganic, Transparent, Flexible, and Nonvolatile Resistive MemoryYuxi Yang0Wenxiu Gao1Zhongshuai Xie2Yaojin Wang3Guoliang Yuan4Jun‐Ming Liu5School of Materials Science and Engineering Nanjing University of Science and Technology Nanjing 210094 P. R. ChinaSchool of Materials Science and Engineering Nanjing University of Science and Technology Nanjing 210094 P. R. ChinaSchool of Materials Science and Engineering Nanjing University of Science and Technology Nanjing 210094 P. R. ChinaSchool of Materials Science and Engineering Nanjing University of Science and Technology Nanjing 210094 P. R. ChinaSchool of Materials Science and Engineering Nanjing University of Science and Technology Nanjing 210094 P. R. ChinaNational Laboratory of Solid State Microstructures Nanjing University Nanjing 210093 P. R. ChinaAbstract A rapid surge in the research of lightweight, invisible, and flexible electronics is occurring with the arrival of Internet of Things (IoT). However, multifunctional perovskite oxide electronics are commonly hard and should be synthesized at high temperature and oxygen ambience, where most transparent conductive films will become brittle or highly resistive. Thus, the realization of transparent and flexible nonvolatile perovskite oxide resistive memory remains a big challenge. Here, a transparent, flexible, nonvolatile, and all‐inorganic memory with the mica substrate is prepared: the 2.7 wt% Ag‐doped indium–tin oxide (Ag–ITO) film as bottom electrodes, the BaTi0.95Co0.05O3−δ (BTCO) film as resistive‐switching functional layer, and the Ag/ITO films as top electrodes. The Ag–ITO/BTCO/Ag/ITO heterosturcture shows a unipolar resistive‐switching behavior, and its high/low resistance ratio is up to 5 × 103 under a low operating voltage (<2.8 V) with fast response speed (≈50 ns). Either high‐ or low‐resistance states remain stable even after the 14 400 cycles' dynamic bending test with the minimum radius of 3 mm. Additionally, the bipolar resistive‐switching characteristic is observed in the ≈85 nm diameter region. As a result, such resistive memory shows potential to be used in many transparent and flexible devices, such as electronic skins and flexible displays.https://doi.org/10.1002/aelm.201800412all‐inorganicflexibleperovskite oxideresistive‐switching memorytransparent |
| spellingShingle | Yuxi Yang Wenxiu Gao Zhongshuai Xie Yaojin Wang Guoliang Yuan Jun‐Ming Liu An All‐Inorganic, Transparent, Flexible, and Nonvolatile Resistive Memory Advanced Electronic Materials all‐inorganic flexible perovskite oxide resistive‐switching memory transparent |
| title | An All‐Inorganic, Transparent, Flexible, and Nonvolatile Resistive Memory |
| title_full | An All‐Inorganic, Transparent, Flexible, and Nonvolatile Resistive Memory |
| title_fullStr | An All‐Inorganic, Transparent, Flexible, and Nonvolatile Resistive Memory |
| title_full_unstemmed | An All‐Inorganic, Transparent, Flexible, and Nonvolatile Resistive Memory |
| title_short | An All‐Inorganic, Transparent, Flexible, and Nonvolatile Resistive Memory |
| title_sort | all inorganic transparent flexible and nonvolatile resistive memory |
| topic | all‐inorganic flexible perovskite oxide resistive‐switching memory transparent |
| url | https://doi.org/10.1002/aelm.201800412 |
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