Thickness-Dependent Band Gap Modification in BaBiO<sub>3</sub>
The material BaBiO<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>3</mn></msub></semantics></math></inline-formula> is known for its insulat...
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-03-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/11/4/882 |
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| author | Rosa Luca Bouwmeester Alexander Brinkman Kai Sotthewes |
| author_facet | Rosa Luca Bouwmeester Alexander Brinkman Kai Sotthewes |
| author_sort | Rosa Luca Bouwmeester |
| collection | DOAJ |
| description | The material BaBiO<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>3</mn></msub></semantics></math></inline-formula> is known for its insulating character. However, for thin films, in the ultra-thin limit, metallicity is expected because the oxygen octahedra breathing mode will be suppressed as reported recently. Here, we confirm the influence of the oxygen breathing mode on the size of the band gap. The electronic properties of a BaBiO<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>3</mn></msub></semantics></math></inline-formula> thickness series are studied using in-situ scanning tunneling microscopy. We observe a wide-gap (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>E</mi><mi mathvariant="normal">G</mi></msub></semantics></math></inline-formula> > 1.2 V) to small-gap (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>E</mi><mi mathvariant="normal">G</mi></msub></semantics></math></inline-formula> ≈ 0.07 eV) semiconductor transition as a function of a decreasing BaBiO<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>3</mn></msub></semantics></math></inline-formula> film thickness. However, even for an ultra-thin BaBiO<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>3</mn></msub></semantics></math></inline-formula> film, no metallic state is present. The dependence of the band gap size is found to be coinciding with the intensity of the Raman response of the breathing phonon mode as a function of thickness. |
| first_indexed | 2024-03-10T12:46:22Z |
| format | Article |
| id | doaj.art-45ca9ef41c94478ea66c4887371802af |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T12:46:22Z |
| publishDate | 2021-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-45ca9ef41c94478ea66c4887371802af2023-11-21T13:27:09ZengMDPI AGNanomaterials2079-49912021-03-0111488210.3390/nano11040882Thickness-Dependent Band Gap Modification in BaBiO<sub>3</sub>Rosa Luca Bouwmeester0Alexander Brinkman1Kai Sotthewes2MESA+ Institute for Nanotechnology, University of Twente, 7500 AE Enschede, The NetherlandsMESA+ Institute for Nanotechnology, University of Twente, 7500 AE Enschede, The NetherlandsMESA+ Institute for Nanotechnology, University of Twente, 7500 AE Enschede, The NetherlandsThe material BaBiO<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>3</mn></msub></semantics></math></inline-formula> is known for its insulating character. However, for thin films, in the ultra-thin limit, metallicity is expected because the oxygen octahedra breathing mode will be suppressed as reported recently. Here, we confirm the influence of the oxygen breathing mode on the size of the band gap. The electronic properties of a BaBiO<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>3</mn></msub></semantics></math></inline-formula> thickness series are studied using in-situ scanning tunneling microscopy. We observe a wide-gap (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>E</mi><mi mathvariant="normal">G</mi></msub></semantics></math></inline-formula> > 1.2 V) to small-gap (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>E</mi><mi mathvariant="normal">G</mi></msub></semantics></math></inline-formula> ≈ 0.07 eV) semiconductor transition as a function of a decreasing BaBiO<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>3</mn></msub></semantics></math></inline-formula> film thickness. However, even for an ultra-thin BaBiO<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>3</mn></msub></semantics></math></inline-formula> film, no metallic state is present. The dependence of the band gap size is found to be coinciding with the intensity of the Raman response of the breathing phonon mode as a function of thickness.https://www.mdpi.com/2079-4991/11/4/882BaBiO<sub>3</sub>scanning tunneling miscroscopyspectroscopypulsed laser depositionperovskitecomplex oxide |
| spellingShingle | Rosa Luca Bouwmeester Alexander Brinkman Kai Sotthewes Thickness-Dependent Band Gap Modification in BaBiO<sub>3</sub> Nanomaterials BaBiO<sub>3</sub> scanning tunneling miscroscopy spectroscopy pulsed laser deposition perovskite complex oxide |
| title | Thickness-Dependent Band Gap Modification in BaBiO<sub>3</sub> |
| title_full | Thickness-Dependent Band Gap Modification in BaBiO<sub>3</sub> |
| title_fullStr | Thickness-Dependent Band Gap Modification in BaBiO<sub>3</sub> |
| title_full_unstemmed | Thickness-Dependent Band Gap Modification in BaBiO<sub>3</sub> |
| title_short | Thickness-Dependent Band Gap Modification in BaBiO<sub>3</sub> |
| title_sort | thickness dependent band gap modification in babio sub 3 sub |
| topic | BaBiO<sub>3</sub> scanning tunneling miscroscopy spectroscopy pulsed laser deposition perovskite complex oxide |
| url | https://www.mdpi.com/2079-4991/11/4/882 |
| work_keys_str_mv | AT rosalucabouwmeester thicknessdependentbandgapmodificationinbabiosub3sub AT alexanderbrinkman thicknessdependentbandgapmodificationinbabiosub3sub AT kaisotthewes thicknessdependentbandgapmodificationinbabiosub3sub |