Heteroleptic Ir(III)-based near-infrared organic light-emitting diodes with high radiance capacity
Abstract Near-infrared organic light-emitting diodes (NIR OLEDs) with heavy metals are regularly reported due to the advantages of their various applications in healthcare services, veil authentication, and night vision displays. For commercial applications, it is necessary to look at radiance capac...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2023-01-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-023-27487-6 |
| _version_ | 1811175870831788032 |
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| author | Yongjin Park Gyeong Seok Lee Woochan Lee Seunghyup Yoo Yun-Hi Kim Kyung-Cheol Choi |
| author_facet | Yongjin Park Gyeong Seok Lee Woochan Lee Seunghyup Yoo Yun-Hi Kim Kyung-Cheol Choi |
| author_sort | Yongjin Park |
| collection | DOAJ |
| description | Abstract Near-infrared organic light-emitting diodes (NIR OLEDs) with heavy metals are regularly reported due to the advantages of their various applications in healthcare services, veil authentication, and night vision displays. For commercial applications, it is necessary to look at radiance capacity (RC) instead of radiance because of power consumption. However, recent papers still reported only simple high radiance performance and do not look at device from the point of view of RC. To overcome this hurdle, we designed Ir(III)-based heteroleptic NIR materials with two types of auxiliary ligand. The proposed emitters achieve a highly oriented horizontal dipole ratio (Ir(mCPDTiq)2tmd, complex 1: 80%, Ir(mCPDTiq)2acac, complex 2: 81%) with a short radiative lifetime (1: 386 ns, 2: 323 ns). The device also shows an extremely low turn-on voltage (Von) of 2.2 V and a high RC of 720 mW/sr/m2/V. The results on the Von and RC of the device is demonstrated an outstanding performance among the Ir(III)-based NIR OLEDs with a similar emission peak. |
| first_indexed | 2024-04-10T19:42:56Z |
| format | Article |
| id | doaj.art-45d6df5ea6014c1788c41a0e850f57f7 |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-04-10T19:42:56Z |
| publishDate | 2023-01-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj.art-45d6df5ea6014c1788c41a0e850f57f72023-01-29T12:11:06ZengNature PortfolioScientific Reports2045-23222023-01-0113111010.1038/s41598-023-27487-6Heteroleptic Ir(III)-based near-infrared organic light-emitting diodes with high radiance capacityYongjin Park0Gyeong Seok Lee1Woochan Lee2Seunghyup Yoo3Yun-Hi Kim4Kyung-Cheol Choi5School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)Department of Chemistry and RNIS, Gyeongsang National UniversitySchool of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)Department of Chemistry and RNIS, Gyeongsang National UniversitySchool of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)Abstract Near-infrared organic light-emitting diodes (NIR OLEDs) with heavy metals are regularly reported due to the advantages of their various applications in healthcare services, veil authentication, and night vision displays. For commercial applications, it is necessary to look at radiance capacity (RC) instead of radiance because of power consumption. However, recent papers still reported only simple high radiance performance and do not look at device from the point of view of RC. To overcome this hurdle, we designed Ir(III)-based heteroleptic NIR materials with two types of auxiliary ligand. The proposed emitters achieve a highly oriented horizontal dipole ratio (Ir(mCPDTiq)2tmd, complex 1: 80%, Ir(mCPDTiq)2acac, complex 2: 81%) with a short radiative lifetime (1: 386 ns, 2: 323 ns). The device also shows an extremely low turn-on voltage (Von) of 2.2 V and a high RC of 720 mW/sr/m2/V. The results on the Von and RC of the device is demonstrated an outstanding performance among the Ir(III)-based NIR OLEDs with a similar emission peak.https://doi.org/10.1038/s41598-023-27487-6 |
| spellingShingle | Yongjin Park Gyeong Seok Lee Woochan Lee Seunghyup Yoo Yun-Hi Kim Kyung-Cheol Choi Heteroleptic Ir(III)-based near-infrared organic light-emitting diodes with high radiance capacity Scientific Reports |
| title | Heteroleptic Ir(III)-based near-infrared organic light-emitting diodes with high radiance capacity |
| title_full | Heteroleptic Ir(III)-based near-infrared organic light-emitting diodes with high radiance capacity |
| title_fullStr | Heteroleptic Ir(III)-based near-infrared organic light-emitting diodes with high radiance capacity |
| title_full_unstemmed | Heteroleptic Ir(III)-based near-infrared organic light-emitting diodes with high radiance capacity |
| title_short | Heteroleptic Ir(III)-based near-infrared organic light-emitting diodes with high radiance capacity |
| title_sort | heteroleptic ir iii based near infrared organic light emitting diodes with high radiance capacity |
| url | https://doi.org/10.1038/s41598-023-27487-6 |
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