| Summary: | Perovskite solar cells represent one of the recent success stories in photovoltaics. The device efficiency has been steadily increasing over the past years, but further work is needed to enhance the performance, for example, through the reduction of defects to prevent carrier recombination. SCAPS-1D simulations were performed to assess efficiency limits and identify approaches to decrease the impact of defects, through the selection of an optimal hole-transport material and a hole-collecting electrode. Particular attention was given to evaluation of the influence of bulk defects within light-absorbing CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub> layers. In addition, the study demonstrates the influence of interface defects at the TiO<sub>2</sub>/CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub> (IL1) and CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub>/HTL (IL2) interfaces across the similar range of defect densities. Finally, the optimal device architecture TiO<sub>2</sub>/CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub>/Cu<sub>2</sub>O is proposed for the given absorber layer using the readily available Cu<sub>2</sub>O hole-transporting material with <i>PCE</i> = 27.95%, <i>FF</i> = 84.05%, <i>V</i><sub>OC</sub> = 1.02 V and <i>J</i><sub>SC</sub> = 32.60 mA/cm<sup>2</sup>, providing optimal performance and enhanced resistance to defects.
|
|---|