Theoretical Evaluation of Possibility to Control Nucleation and Growth of Heteroepitaxial Carbon Films by Applied Fields
On the basis of the literature review, comparison of physical and chemical properties of materials and calculations, it was showed that the copper, saturated with hydrogen, is an appropriate substrate material for heteroepitaxial growth of diamond films. The atomic hydrogen in tetrapores of copper c...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
al-Farabi Kazakh National University
2001-12-01
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| Series: | Eurasian Chemico-Technological Journal |
| Online Access: | http://ect-journal.kz/index.php/ectj/article/view/59 |
| Summary: | On the basis of the literature review, comparison of physical and chemical properties of materials and
calculations, it was showed that the copper, saturated with hydrogen, is an appropriate substrate material
for heteroepitaxial growth of diamond films. The atomic hydrogen in tetrapores of copper crystalline
lattice will be the crystallisation centre of carbon. Herewith the difference in lattice cell parameters between
the substrate and the growing diamond film is considerably reduced, i.e. epitaxial growth of crystal
is possible. Besides, the disposition of tetrapores on the copper surface (111) and, respectively, of atomic
hydrogen located in them, creates conditions for preferential formation of tetragonal bonds of carbon.
The estimations have shown that it is possible to create conditions for preferential oriented growth of
diamond films through changing the magnitude and configuration of applied fields. |
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| ISSN: | 1562-3920 2522-4867 |