Doping of Sb into Cu2ZnSn(S,Se)4 absorber layer via Se&Sb2Se3 co-selenization strategy for enhancing open-circuit voltage of kesterite solar cells
Kesterite-structured Cu2ZnSn(S,Se)4 (CZTSSe) thin film photovoltaics have attracted considerable attention in recent years because of its low-cost and eco-friendly raw material, as well as high theoretical conversion efficiency. However, its photovoltaic performance is hindered by large open-circuit...
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Frontiers Media S.A.
2022-08-01
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Online Access: | https://www.frontiersin.org/articles/10.3389/fchem.2022.974761/full |
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author | Benhui Zhao Yueqing Deng Lei Cao Jichun Zhu Zhengji Zhou |
author_facet | Benhui Zhao Yueqing Deng Lei Cao Jichun Zhu Zhengji Zhou |
author_sort | Benhui Zhao |
collection | DOAJ |
description | Kesterite-structured Cu2ZnSn(S,Se)4 (CZTSSe) thin film photovoltaics have attracted considerable attention in recent years because of its low-cost and eco-friendly raw material, as well as high theoretical conversion efficiency. However, its photovoltaic performance is hindered by large open-circuit voltage (VOC) deficiency due to the presence of intrinsic defects and defect clusters in the bulk of CZTSSe absorber films. The doping of extrinsic cation to the CZTSSe matrix was adopted as an effective strategy to ameliorate defect properties of the solar cell absorbers. Herein, a novel Se&Sb2Se3 co-selenization process was employed to introduce Sb into CZTSSe crystal lattice. The results reveal that Sb-doping plays an active role in the crystallization and grain growth of CZTSSe absorber layer. More importantly, one of the most seriously detrimental SnZn deep defect is effectively passivated, resulting in significantly reduced deep-level traps and band-tail states compared to Sb free devices. As a result, the power conversion efficiency of CZTSSe solar cell is increased significantly from 9.17% to 11.75%, with a VOC especially enlarged to 505 mV from 449 mV. This insight provides a deeper understanding for engineering the harmful Sn-related deep defects for future high-efficiency CZTSSe photovoltaic devices. |
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spelling | doaj.art-462a458a0d804b61a2b50f135355b4102022-12-22T01:32:37ZengFrontiers Media S.A.Frontiers in Chemistry2296-26462022-08-011010.3389/fchem.2022.974761974761Doping of Sb into Cu2ZnSn(S,Se)4 absorber layer via Se&Sb2Se3 co-selenization strategy for enhancing open-circuit voltage of kesterite solar cellsBenhui Zhao0Yueqing Deng1Lei Cao2Jichun Zhu3Zhengji Zhou4Miami College of Henan University, Kaifeng, ChinaKey Lab for Special Functional Materials, Ministry of Education, National and Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technology, and School of Materials, Henan University, Kaifeng, ChinaKey Lab for Special Functional Materials, Ministry of Education, National and Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technology, and School of Materials, Henan University, Kaifeng, ChinaMiami College of Henan University, Kaifeng, ChinaKey Lab for Special Functional Materials, Ministry of Education, National and Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technology, and School of Materials, Henan University, Kaifeng, ChinaKesterite-structured Cu2ZnSn(S,Se)4 (CZTSSe) thin film photovoltaics have attracted considerable attention in recent years because of its low-cost and eco-friendly raw material, as well as high theoretical conversion efficiency. However, its photovoltaic performance is hindered by large open-circuit voltage (VOC) deficiency due to the presence of intrinsic defects and defect clusters in the bulk of CZTSSe absorber films. The doping of extrinsic cation to the CZTSSe matrix was adopted as an effective strategy to ameliorate defect properties of the solar cell absorbers. Herein, a novel Se&Sb2Se3 co-selenization process was employed to introduce Sb into CZTSSe crystal lattice. The results reveal that Sb-doping plays an active role in the crystallization and grain growth of CZTSSe absorber layer. More importantly, one of the most seriously detrimental SnZn deep defect is effectively passivated, resulting in significantly reduced deep-level traps and band-tail states compared to Sb free devices. As a result, the power conversion efficiency of CZTSSe solar cell is increased significantly from 9.17% to 11.75%, with a VOC especially enlarged to 505 mV from 449 mV. This insight provides a deeper understanding for engineering the harmful Sn-related deep defects for future high-efficiency CZTSSe photovoltaic devices.https://www.frontiersin.org/articles/10.3389/fchem.2022.974761/fullCZTSSedeep defectopen-circuit voltagesolar cellsco-selenization |
spellingShingle | Benhui Zhao Yueqing Deng Lei Cao Jichun Zhu Zhengji Zhou Doping of Sb into Cu2ZnSn(S,Se)4 absorber layer via Se&Sb2Se3 co-selenization strategy for enhancing open-circuit voltage of kesterite solar cells Frontiers in Chemistry CZTSSe deep defect open-circuit voltage solar cells co-selenization |
title | Doping of Sb into Cu2ZnSn(S,Se)4 absorber layer via Se&Sb2Se3 co-selenization strategy for enhancing open-circuit voltage of kesterite solar cells |
title_full | Doping of Sb into Cu2ZnSn(S,Se)4 absorber layer via Se&Sb2Se3 co-selenization strategy for enhancing open-circuit voltage of kesterite solar cells |
title_fullStr | Doping of Sb into Cu2ZnSn(S,Se)4 absorber layer via Se&Sb2Se3 co-selenization strategy for enhancing open-circuit voltage of kesterite solar cells |
title_full_unstemmed | Doping of Sb into Cu2ZnSn(S,Se)4 absorber layer via Se&Sb2Se3 co-selenization strategy for enhancing open-circuit voltage of kesterite solar cells |
title_short | Doping of Sb into Cu2ZnSn(S,Se)4 absorber layer via Se&Sb2Se3 co-selenization strategy for enhancing open-circuit voltage of kesterite solar cells |
title_sort | doping of sb into cu2znsn s se 4 absorber layer via se sb2se3 co selenization strategy for enhancing open circuit voltage of kesterite solar cells |
topic | CZTSSe deep defect open-circuit voltage solar cells co-selenization |
url | https://www.frontiersin.org/articles/10.3389/fchem.2022.974761/full |
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