Enhanced Properties of SAW Device Based on Beryllium Oxide Thin Films

The present study depicts the first-ever optimized surface acoustic wave (SAW) device based on Beryllium Oxide (BeO) thin film. The feasibility of surface acoustic wave devices based on BeO/128° YX LiNbO<sub>3</sub> layered structure has been examined theoretically. The SAW phase velocit...

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Main Authors: Namrata Dewan Soni, Jyoti Bhola
Format: Article
Language:English
Published: MDPI AG 2021-03-01
Series:Crystals
Subjects:
Online Access:https://www.mdpi.com/2073-4352/11/4/332
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author Namrata Dewan Soni
Jyoti Bhola
author_facet Namrata Dewan Soni
Jyoti Bhola
author_sort Namrata Dewan Soni
collection DOAJ
description The present study depicts the first-ever optimized surface acoustic wave (SAW) device based on Beryllium Oxide (BeO) thin film. The feasibility of surface acoustic wave devices based on BeO/128° YX LiNbO<sub>3</sub> layered structure has been examined theoretically. The SAW phase velocity, electromechanical coupling coefficient, and temperature coefficient of delay for BeO/128° YX LiNbO<sub>3</sub> layered structure are calculated. The layered structure is found to exhibit optimum value of phase velocity (4476 ms<sup>−1</sup>) and coupling coefficient (~9.66%) at BeO over layer thickness of 0.08 λ. The BeO (0.08 λ)/128° YX LiNbO<sub>3</sub> SAW device is made temperature stable, by integrating it with negative temperature coefficient of delay (TCD) TeO<sub>3</sub> over layer of thickness 0.026λ.
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spelling doaj.art-465e883179cc4792b8d13a46c28033352023-11-21T12:04:22ZengMDPI AGCrystals2073-43522021-03-0111433210.3390/cryst11040332Enhanced Properties of SAW Device Based on Beryllium Oxide Thin FilmsNamrata Dewan Soni0Jyoti Bhola1Department of Physics, Hansraj College, University of Delhi, Delhi 110007, IndiaDepartment of Mathematics, Hansraj College, University of Delhi, Delhi 110007, IndiaThe present study depicts the first-ever optimized surface acoustic wave (SAW) device based on Beryllium Oxide (BeO) thin film. The feasibility of surface acoustic wave devices based on BeO/128° YX LiNbO<sub>3</sub> layered structure has been examined theoretically. The SAW phase velocity, electromechanical coupling coefficient, and temperature coefficient of delay for BeO/128° YX LiNbO<sub>3</sub> layered structure are calculated. The layered structure is found to exhibit optimum value of phase velocity (4476 ms<sup>−1</sup>) and coupling coefficient (~9.66%) at BeO over layer thickness of 0.08 λ. The BeO (0.08 λ)/128° YX LiNbO<sub>3</sub> SAW device is made temperature stable, by integrating it with negative temperature coefficient of delay (TCD) TeO<sub>3</sub> over layer of thickness 0.026λ.https://www.mdpi.com/2073-4352/11/4/332beryllium oxidelithium NiobateSAW devices
spellingShingle Namrata Dewan Soni
Jyoti Bhola
Enhanced Properties of SAW Device Based on Beryllium Oxide Thin Films
Crystals
beryllium oxide
lithium Niobate
SAW devices
title Enhanced Properties of SAW Device Based on Beryllium Oxide Thin Films
title_full Enhanced Properties of SAW Device Based on Beryllium Oxide Thin Films
title_fullStr Enhanced Properties of SAW Device Based on Beryllium Oxide Thin Films
title_full_unstemmed Enhanced Properties of SAW Device Based on Beryllium Oxide Thin Films
title_short Enhanced Properties of SAW Device Based on Beryllium Oxide Thin Films
title_sort enhanced properties of saw device based on beryllium oxide thin films
topic beryllium oxide
lithium Niobate
SAW devices
url https://www.mdpi.com/2073-4352/11/4/332
work_keys_str_mv AT namratadewansoni enhancedpropertiesofsawdevicebasedonberylliumoxidethinfilms
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