Control of metal-insulator transition temperature in VO2 thin films grown on RuO2/TiO2 templates by strain modification
Ruthenium dioxide (RuO2) is an ideal buffer layer for vanadium dioxide (VO2) heterostructures due to its high electrical conductivity and matching crystal structure with metallic VO2. VO2 thin films were deposited on single crystal TiO2 (001) substrates with RuO2 buffer layers via pulsed laser depos...
Main Authors: | H. Kim, N. A. Charipar, J. Figueroa, N. S. Bingham, A. Piqué |
---|---|
Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2019-01-01
|
Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.5083848 |
Similar Items
-
Strain effect in epitaxial VO2 thin films grown on sapphire substrates using SnO2 buffer layers
by: Heungsoo Kim, et al.
Published: (2017-10-01) -
Hallmarks of Hunds coupling in the Mott insulator Ca2RuO4
by: D. Sutter, et al.
Published: (2017-05-01) -
Preparation and electrochemical capacitance of high surface area TiO2–RuO2 aerogels
by: Gabriella M.V. Dias, et al.
Published: (2021-12-01) -
Constructing Ru/TiO
2
Heteronanostructures Toward Enhanced Photocatalytic Water Splitting via a RuO
2
/TiO
2
Heterojunction and Ru/TiO
2
Schottky Junction
by: Gu, Quan, et al.
Published: (2017) -
Green Synthesis and Modification of RuO2 Materials for the Oxygen Evolution Reaction
by: Abirami Devadas, et al.
Published: (2020-10-01)