Recent Advances of Volatile Memristors: Devices, Mechanisms, and Applications
Due to the rapid development of artificial intelligence (AI) and internet of things (IoTs), neuromorphic computing and hardware security are becoming more and more important. The volatile memristors, which feature spontaneous decay of device conductance, own the distinct combination of high similari...
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2020-09-01
|
| Series: | Advanced Intelligent Systems |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aisy.202000055 |
| _version_ | 1828469562526400512 |
|---|---|
| author | Ruopeng Wang Jia-Qin Yang Jing-Yu Mao Zhan-Peng Wang Shuang Wu Maojie Zhou Tianyi Chen Ye Zhou Su-Ting Han |
| author_facet | Ruopeng Wang Jia-Qin Yang Jing-Yu Mao Zhan-Peng Wang Shuang Wu Maojie Zhou Tianyi Chen Ye Zhou Su-Ting Han |
| author_sort | Ruopeng Wang |
| collection | DOAJ |
| description | Due to the rapid development of artificial intelligence (AI) and internet of things (IoTs), neuromorphic computing and hardware security are becoming more and more important. The volatile memristors, which feature spontaneous decay of device conductance, own the distinct combination of high similarity to the biological neurons and synapses and unique physical mechanisms. They are excellent candidates for mimicking the synaptic functions and ideal randomness source of the entropy for hardware‐based security. Herein, the recent advances of volatile memristors in devices, mechanisms, and application aspects are summarized. First, a brief introduction is presented to describe the switching type, materials, and temporal response of volatile memristors. Second, the volatile switching mechanisms are discussed and grouped into ion effects, thermal effects, and electrical effects. Third, attention is focused on the applications of volatile memristors for access devices, neuromorphic computing (artificial neurons and synapses), and hardware security (true random number generators and physical unclonable functions). Finally, major challenges and future outlook of volatile memristors for neuromorphic computing and hardware security are discussed. |
| first_indexed | 2024-12-11T04:41:04Z |
| format | Article |
| id | doaj.art-469d0f34630048aaa319174854bc4a37 |
| institution | Directory Open Access Journal |
| issn | 2640-4567 |
| language | English |
| last_indexed | 2024-12-11T04:41:04Z |
| publishDate | 2020-09-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Intelligent Systems |
| spelling | doaj.art-469d0f34630048aaa319174854bc4a372022-12-22T01:20:37ZengWileyAdvanced Intelligent Systems2640-45672020-09-0129n/an/a10.1002/aisy.202000055Recent Advances of Volatile Memristors: Devices, Mechanisms, and ApplicationsRuopeng Wang0Jia-Qin Yang1Jing-Yu Mao2Zhan-Peng Wang3Shuang Wu4Maojie Zhou5Tianyi Chen6Ye Zhou7Su-Ting Han8College of Electronics and Information Engineering Shenzhen University Shenzhen 518060 P. R. ChinaCollege of Electronics and Information Engineering Shenzhen University Shenzhen 518060 P. R. ChinaInstitute for Advanced Study Shenzhen University Shenzhen 518060 P. R. ChinaInstitute for Advanced Study Shenzhen University Shenzhen 518060 P. R. ChinaInstitute for Advanced Study Shenzhen University Shenzhen 518060 P. R. ChinaCollege of Electronics and Information Engineering Shenzhen University Shenzhen 518060 P. R. ChinaCollege of Electronics and Information Engineering Shenzhen University Shenzhen 518060 P. R. ChinaInstitute for Advanced Study Shenzhen University Shenzhen 518060 P. R. ChinaInstitute of Microscale optoelectronics Shenzhen University Shenzhen 518060 P. R. ChinaDue to the rapid development of artificial intelligence (AI) and internet of things (IoTs), neuromorphic computing and hardware security are becoming more and more important. The volatile memristors, which feature spontaneous decay of device conductance, own the distinct combination of high similarity to the biological neurons and synapses and unique physical mechanisms. They are excellent candidates for mimicking the synaptic functions and ideal randomness source of the entropy for hardware‐based security. Herein, the recent advances of volatile memristors in devices, mechanisms, and application aspects are summarized. First, a brief introduction is presented to describe the switching type, materials, and temporal response of volatile memristors. Second, the volatile switching mechanisms are discussed and grouped into ion effects, thermal effects, and electrical effects. Third, attention is focused on the applications of volatile memristors for access devices, neuromorphic computing (artificial neurons and synapses), and hardware security (true random number generators and physical unclonable functions). Finally, major challenges and future outlook of volatile memristors for neuromorphic computing and hardware security are discussed.https://doi.org/10.1002/aisy.202000055functional materialsneuromorphic computingswitching mechanismtemporal responsevolatile memristors |
| spellingShingle | Ruopeng Wang Jia-Qin Yang Jing-Yu Mao Zhan-Peng Wang Shuang Wu Maojie Zhou Tianyi Chen Ye Zhou Su-Ting Han Recent Advances of Volatile Memristors: Devices, Mechanisms, and Applications Advanced Intelligent Systems functional materials neuromorphic computing switching mechanism temporal response volatile memristors |
| title | Recent Advances of Volatile Memristors: Devices, Mechanisms, and Applications |
| title_full | Recent Advances of Volatile Memristors: Devices, Mechanisms, and Applications |
| title_fullStr | Recent Advances of Volatile Memristors: Devices, Mechanisms, and Applications |
| title_full_unstemmed | Recent Advances of Volatile Memristors: Devices, Mechanisms, and Applications |
| title_short | Recent Advances of Volatile Memristors: Devices, Mechanisms, and Applications |
| title_sort | recent advances of volatile memristors devices mechanisms and applications |
| topic | functional materials neuromorphic computing switching mechanism temporal response volatile memristors |
| url | https://doi.org/10.1002/aisy.202000055 |
| work_keys_str_mv | AT ruopengwang recentadvancesofvolatilememristorsdevicesmechanismsandapplications AT jiaqinyang recentadvancesofvolatilememristorsdevicesmechanismsandapplications AT jingyumao recentadvancesofvolatilememristorsdevicesmechanismsandapplications AT zhanpengwang recentadvancesofvolatilememristorsdevicesmechanismsandapplications AT shuangwu recentadvancesofvolatilememristorsdevicesmechanismsandapplications AT maojiezhou recentadvancesofvolatilememristorsdevicesmechanismsandapplications AT tianyichen recentadvancesofvolatilememristorsdevicesmechanismsandapplications AT yezhou recentadvancesofvolatilememristorsdevicesmechanismsandapplications AT sutinghan recentadvancesofvolatilememristorsdevicesmechanismsandapplications |